Method for forming good ohmic contacts of metal-two-dimensional transition metal compound materials

Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a method for forming good ohmic contact of metal-two-dimensional transition metal compound materials.The method comprises the steps of depositing a metal precursor, depositing a metal adhesion layer and metal electrodes, and forming a transition metal compound thin film. The related good ohmic contact of metal-two-dimensional materials comprises a substrate, a two-dimensional material arranged on the substrate and metal electrode materials on the two-dimensional material, wherein the metal electrode materials comprises the adhesion layer and an electrode material. A lot of researches have been conducted on two-dimensional materials, but a good solution of good ohmic contact of the metal-two-dimensional transition metal compound materials is lacked at present, the method disclosed by the invention solves the problem of ohmic contact of the metal-two-dimensional semiconductor materials, and can realize the preparation of large-area two-dimensional semiconductor thin film with controllable layer number, thus the method can be applied to large-scale integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a method for preparing a metal-two-dimensional semiconductor material ohmic contact. Background technique [0002] Since the discovery of graphene, two-dimensional materials began to come into people's sight, and at the same time received more and more attention. However, due to the special structure of graphene, it cannot be applied to semiconductor transistors. At this time, the graphene-like structure Two-dimensional transition metal compounds (TMDCs) come into people's eyes. [0003] Transition metal compounds not only have high mobility, but also maintain excellent electrical properties when the film thickness is reduced to a single layer, so they are good materials for semiconductor devices. Two-dimensional TMDCs currently available, including MoS 2 、MoSe 2 、MoTe 2 、WS 2 , and WSe 2 etc. There are mainly methods such as mechanical stripping a...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for forming good ohmic contact of metal-two-dimensional semiconductor materials, so as to solve the problem of poor contact of metal-two-dimensional semiconductor materials at present

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