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A shielding frame and chemical vapor deposition device

A technology of shielding frame and limiting device, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of anode peeling, electric breakdown, affecting machine operation and production, etc.

Active Publication Date: 2020-05-01
KUSN INFOVISION OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Considering the advantages of using a shadow frame, the current shadow frame design has some disadvantages
The shielding frame used in the prior art is an aluminum base, and the surface is anodized to achieve the purpose of insulation. Because the aluminum material is soft, it is easy to deform, resulting in insufficient shielding to produce film halo or excessive pressure on the glass substrate, resulting in fragmentation. Normal operation of the machine, production
In addition, during the chemical vapor deposition (Chemical Vapor Deposition, CVD) process, the temperature is 340 / 360, 275 / 285 degrees Celsius, and the anode on the surface of the aluminum material is likely to cause anode peeling due to the different thermal expansion coefficients during the process, and the generated particles will affect the product. Yield
[0005] Moreover, in the production process, due to the different thickness of the adapted glass substrate (0.4-0.7mm) and the deformation of the mechanical frame after being stressed, it will cause abnormal products. The shielding frame has a gap to separate the shielding frame from the edge surface of the substrate. If the gap is too large, the gas or plasma will reach the edge and back of the substrate, and electric breakdown will occur. If the gap is too small, the glass substrate will be pressed and the substrate will be damaged.

Method used

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  • A shielding frame and chemical vapor deposition device
  • A shielding frame and chemical vapor deposition device
  • A shielding frame and chemical vapor deposition device

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Embodiment Construction

[0025] In order to further illustrate the technical means and effects adopted by the present invention to achieve the predetermined purpose of the invention, the specific embodiments, structures, features and effects of the present invention are described in detail below in conjunction with the accompanying drawings and examples.

[0026] figure 1 It is a schematic structural diagram of a shielding frame according to an embodiment of the present invention, figure 2 It is a schematic diagram of the structure of the positioning pin according to the embodiment of the present invention. Please refer to figure 1 and figure 2 , the shielding frame of the embodiment of the present invention can be combined with a bearing platform to shield the substrate during the processing of the liquid crystal display screen. The shielding frame includes a shielding outer frame 100 and a shielding inner frame 200, and the shielding outer frame 100 A limiting device is protruded from one side ...

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Abstract

The invention discloses a masking frame. The masking frame can be combined with a bearing platform so as to mask the surrounding area of a substrate positioned on the bearing platform. The masking frame comprises a masking outer frame and a masking inner frame, wherein one surface of the masking outer frame, separating from the bearing platform, is convexly provided with at least one limiting device; the masking inner frame is sheathed with the masking outer frame by the limiting device, so that the masking inner frame is fixed relatively to the horizontal direction of the masking outer frame,but is movable in the vertical direction. The invention also discloses a chemical vapor deposition device comprising the masking frame. By the structure, good laminating effect of the masking frame and the substrate is good.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a shielding frame and a chemical vapor deposition device. Background technique [0002] Modern semiconductor devices require deposition and removal of multiple layers of conductive, semiconductive, and dielectric materials from glass substrates to form features, such as organic light emitting diodes (OLEDs), transistors, and low-k dielectric films. Glass substrate processing techniques include chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced chemical vapor deposition (PECVD), etching, and the like. Plasma processing is widely used in the production of flat panel devices because of the relatively low processing temperatures required to deposit thin films, and the good film quality that can result from the use of plasma processing. [0003] During processing, the edges and backs of glass substrates and components inside the chamber must be pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/04C23C16/458
CPCC23C16/042C23C16/4581
Inventor 徐荣桢陶灵芝
Owner KUSN INFOVISION OPTOELECTRONICS