A stepped collimator structure for direct-write vacuum evaporation system

Abstract

The invention discloses a novel stepped collimated pipe structure applied to a direct writing type vacuum evaporation system for preventing mask hole blockage and particle scattering. The stepped collimated pipe structure comprises a base, a mask piece, a collimated pipe, a first particle reflection stop step, a second particle reflection stop step and a collimated hole. The first particle reflection stop step is located on the upper portion inside the collimated pipe and connected with the upper surface of the collimated pipe and the upper surface of the second particle reflection stop step,the second particle reflection stop step is located in the middle inside the collimated pipe and connected with the lower surface of the first particle reflection stop step and the upper surface of the collimated hole, the collimated hole is located on the lower portion inside the collimated pipe and connected with the lower surface of the second particle reflection stop step and the lower surfaceof the collimated pipe. The direct writing type vacuum evaporation system has the advantages that the structure is compact, the machining speed is high, the mask service life is long, machining feature edge is clear, particle scattering can be avoided, materials are saved, and the machining purity is high.

Description

technical field [0001] The invention relates to a novel stepped collimation tube structure used in a direct-writing vacuum evaporation system for preventing mask hole blockage and particle scattering. Background technique [0002] The invention patent "A Direct-Writing Vacuum Evaporation System and Its Method" (Patent No.: WO2015100730A1) proposes a direct-writing vacuum evaporation system. On the basis of maintaining the structure of the sample chamber of the existing vacuum evaporation device, the invention introduces The nano-shift positions the sample stage and the mask mechanism, so that the evaporated high-purity gas-phase target material is transformed into a gas-phase target material beam with a nanoscale size, which is directly deposited on the substrate, thereby realizing the preparation of free patterns. [0003] The existing vacuum evaporation device that does not include a shifting sample stage is to directly attach the photoresist to the sample substrate, so as...

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Problems solved by technology

[0003] The existing vacuum evaporation device that does not include a shifting sample stage is to directly attach the photoresist to the sample substrate, so as to realize the function of processing a specific sample shape, so there will be no technical problems such as gaseous target beam scattering, However, for a vacuum evaporation device with a shifting sample stage, there may be a micron-level gap between the mask and the substrate, and the mask hole scale (<1 μm), is prone to particle scattering problems”; at the same time, the direction of motion The non-collimated gaseous target beam will also cause the mask hole to be blocked (the evaporated gaseous target particle flow hits the inner wall of the mask hole and condenses, causing the mask hole to be blocked), which shortens the service life of the mask hole

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