Ultrasonic atomization pyrolytic deposition device and method for preparing thin film by using device

An ultrasonic atomization and deposition device technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of unstable film formation, small film formation area, poor film formation uniformity, etc., and achieve the goal of manufacturing The effect of short cycle, low price, optimization of gas diffusion direction and uniformity

Active Publication Date: 2018-08-10
BEIJING INST OF ENVIRONMENTAL FEATURES +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problems of small film-forming area, poor film-forming uniformity and unstable film-forming in the prior art, the p

Method used

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  • Ultrasonic atomization pyrolytic deposition device and method for preparing thin film by using device
  • Ultrasonic atomization pyrolytic deposition device and method for preparing thin film by using device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Cleaning the film growth substrate: Clean the surface of the film growth substrate with surfactant, rinse with deionized water, dry the surface with an air gun, dry in an oven or immerse the film growth substrate in acetone solution, ultrasonically clean, and dry the surface with an air gun , into the oven to dry. Place the cleaned thin film growth substrate at the bottom of the conical growth chamber. The film growth substrate used is a circular glass substrate with a diameter of 22 cm and an area of ​​380 cm 2 .

[0059] Atomization: Take an appropriate amount of solution and pour it into the atomization bottle. In order to ensure the amount of atomization, avoid pouring too much solution. Thin film growth precursor solution is added in atomizing bottle, used thin film growth precursor solution is formulated by weak acid salt (for example, can select acetate for use) and catalyst solution, and used catalyst solution is the weak alkali solution that pH is 7.2, The p...

Embodiment 2

[0065] Preparation method is basically the same as Example 1, except that:

[0066] Set the carrier gas flow rate to 5L / min;

[0067] The thin film growth substrate was heated to 320°C.

[0068] The prepared product is a transparent film with high crystalline quality and visible light transmittance.

[0069] Film area up to 376cm 2 , accounting for 99% of the film growth substrate area.

[0070] Measure the thickness somewhere on the edge of the film and compare it with the thickness somewhere in the middle of the film. The difference between the former and the latter is only -0.021mm.

Embodiment 3

[0072] Preparation method is basically the same as Example 1, except that:

[0073] Set the carrier gas flow rate to 6L / min;

[0074] The thin film growth substrate was heated to 350°C.

[0075] The prepared product is a transparent film with high crystalline quality and visible light transmittance.

[0076] Film area up to 375cm 2 , accounting for 99% of the film growth substrate area.

[0077] Measure the thickness somewhere on the edge of the film and compare it with the thickness somewhere in the middle of the film. The difference between the former and the latter is only -0.019mm.

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Abstract

The invention relates to an ultrasonic atomization pyrolytic deposition device and a method for preparing a thin film by using the device. The device comprises a gas phase growing agent producing chamber and a pyrolytic deposition thin film growing chamber. The gas phase growing agent producing chamber comprises an atomizing box, an atomizing bottle, an ultrasonic atomization oscillator, a carriergas inflow pipe and a carrier gas outflow pipe; the carrier gas inflow pipe and the carrier gas outflow pipe are adjustable relative to each other at the pipe opening position in the atomizing bottlein the height direction; the ultrasonic atomization oscillator is fixed in the atomizing box; and the atomizing bottle is placed on the ultrasonic atomization oscillator. The pyrolytic deposition thin film growing chamber comprises a conical growing bin and a temperature control heating device; and a thin film growing substrate is arranged at the bottom of a bin cavity of the conical growing bin,and a rectifying device is arranged at the position, close to the top, in the bin cavity. Due to the device and the method, the transparent and uniform thickness thin film can be made, a growing source for use is low in price, the process is simple, and the preparing period is short.

Description

technical field [0001] The invention relates to the field of photoelectric product application technology, in particular to an ultrasonic atomization pyrolysis deposition device and a method for preparing a thin film using the device. Background technique [0002] With the development of the microelectronics industry and the advancement of information technology, human society has ushered in a period of rapid development in the information age. The rapid development of the field of optoelectronics has prompted continuous improvement of thin film preparation technology. Ultrasonic atomization pyrolysis deposition equipment has attracted the attention of scientific research, industry and other circles because of its low price, high-quality film formation and other excellent characteristics. It is suitable for large-scale promotion to factory production and has broad application prospects. [0003] The ultrasonic atomization vapor deposition method currently used at home and ...

Claims

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Application Information

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IPC IPC(8): C23C16/448C23C16/455
CPCC23C16/4485C23C16/455
Inventor 王肖珩周翔张尚张广陈大鹏温梓彤
Owner BEIJING INST OF ENVIRONMENTAL FEATURES
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