SOI NMOS total-dose radiation multi-offset point current model establishing method

Abstract

The invention provides an SOI NMOS total-dose radiation multi-bias point current model establishing method. The method comprises the following steps of: obtaining transfer characteristic data, under different drain terminal offsets, of an SOI NMOS side wall transistor and transfer characteristic data, under different doses of radiation and different drain terminal offsets, of the SOI NMOS side wall transistor through test; screening data and extracting parameters; importing a threshold voltage model of a drain-induced barrier lowering effect, a threshold voltage deviation model of a radiationeffect and an equivalent grid voltage model of a side wall transistor total-dose radiation effect into a side wall transistor current model; and forming an SOI NMOS total-dose radiation current model.The method is suitable for total-dose radiation simulation under different drain terminal offset voltages, is capable of fitting transfer characteristic curves, under different drain terminal offsets, of SOI NMOS when being influenced by the total-dose radiation effect more correctly, and is more suitable for total-dose radiation effect simulation of integrated circuits.

Description

technical field [0001] The invention relates to the research field of total dose radiation, in particular to a modeling method for SOI NMOS total dose radiation multi-bias point current model. Background technique [0002] With the development of aerospace technology, a large number of aerospace electronic devices have been used in the space environment. Since there is no protection of the atmosphere, electronic devices are vulnerable to cosmic rays in space, resulting in radiation-related effects such as single event effects, transient radiation effects, and total dose effects. Studies have shown that the total dose radiation effect will attenuate the electrical performance of MOS and double-terminal devices, thereby affecting the working state of the entire circuit. Therefore, the design of anti-radiation hardening has become a hot spot in circuit design in the aerospace field. [0003] Silicon-on-Insulator (Silicon-on-Insulator, SOI) technology has the advantages of sma...

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a SOI NMOS total dose radiation multi-bias point current model modeling method, which is used to solve the problem of high cost and long period of total dose radiation effect research in the prior art. And other issues

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