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Image sensor and formation method thereof

An image sensor and device technology, applied in solid-state image signal generators, image signal generators, electric solid-state devices, etc., can solve problems such as underexposure, insufficient dynamic range of image sensors, overexposure of output images, etc., to extend exposure time , Improve image quality, improve the effect of dynamic range

Inactive Publication Date: 2018-08-14
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology

[0006] However, in the prior art, the dynamic range of the image sensor is often insufficient, and the output image is prone to overexposure or underexposure.

Method used

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  • Image sensor and formation method thereof
  • Image sensor and formation method thereof
  • Image sensor and formation method thereof

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Embodiment Construction

[0036] In the prior art, the optical filter matrix includes a plurality of minimum repeating units, and the optical filter matrix may be, for example, a Bayer array, a mosaic sequential array or other pattern arrays.

[0037] In the filter matrix, more green filters are generally arranged, so in order to improve the image quality output by the image sensor, the photoelectric response performance of the green filter should be improved as much as possible. Taking the Bayer array as an example, the green filter contained in the minimum repeating unit is twice as many as the red filter or the blue filter, and the green filter is alternately embedded in the adjacent row between the blue filter between or between red filters.

[0038] figure 1 It is a schematic diagram of a photoelectric response curve of a green filter of an image sensor in the prior art.

[0039] Such as figure 1As shown, the horizontal axis is the exposure time under a fixed light intensity environment, the lo...

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Abstract

Disclosed are an image sensor and a formation method thereof. The image sensor comprises a semiconductor substrate, a pixel device positioned in the semiconductor substrate, and a light filter matrixpositioned on the surface of the semiconductor substrate, wherein the light filter matrix comprises multiple minimum repetitive units; each minimum repetitive unit at least comprises a first green light filter and a second green light filter; and the light receiving areas of the first green light filter and the second green light filter are different. By virtue of the scheme disclosed in the invention, the dynamic range of the image sensor can be enlarged.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique [0002] The image sensor is the core component of the camera equipment, which realizes the image capture function by converting the optical signal into an electrical signal. Taking a CMOS image sensor (CMOS Image Sensors, CIS for short) device as an example, it has been widely used in various fields due to its advantages of low power consumption and high signal-to-noise ratio. [0003] Taking Back-side Illumination (BSI for short) CIS as an example, in the existing manufacturing process, logic devices, pixel devices and metal interconnection structures are first formed in the semiconductor substrate, and then the carrier wafer and the described Bonding of the front side of the semiconductor substrate, thinning the back of the semiconductor substrate, and forming a subsequent process of CIS on...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N9/04
CPCH01L27/14621H01L27/14645H01L27/14685H04N23/10
Inventor 吕相南北村陽介黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
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