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Memory system and method of operating the same

A memory system and memory technology, applied in the direction of memory system, static memory, digital memory information, etc.

Active Publication Date: 2018-08-21
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, newer memory devices such as MDS (Managed DRAM Solutions) may require the memory system to use a different interface than existing DRAM interfaces

Method used

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  • Memory system and method of operating the same
  • Memory system and method of operating the same
  • Memory system and method of operating the same

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0025] Hereinafter, example embodiments of the inventive concept will be described more fully so that those skilled in the art can easily understand the inventive concept.

[0026] figure 1 is a block diagram illustrating a memory system according to example embodiments of the inventive concepts. refer to figure 1 , the memory system 1000 may include a processor 1100 , a main memory 1200 and a storage device 1300 .

[0027] Memory system 1000 includes a set of electronic devices (processors, memory devices, etc.) organized to provide specific functions to a user using memory and operating resources. Memory system 1000 may be included in a variety of device types including, but not limited to, computing devices that include at least one processor (e.g., personal computers, peripherals, digital cameras, PDAs (personal digital assistants), PMPs (portable media players), ), smartphones, tablets and wearable devices, etc.).

[0028] The processor 1100 may perform various arithm...

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Abstract

A memory system according to example embodiments of the inventive concept may include a storage device and a memory device. The storage device includes a first interface circuit configured to be connected to a processor and a second interface circuit different from the first interface circuit. The memory device includes a third interface circuit configured to be connected to the processor based ona DRAM interface, a fourth interface circuit configured to be different from the third interface circuit and configured to be connected to the second interface circuit, and a random access memory divided into a first memory area and a second memory area. The first memory area is accessed by the processor through the third interface circuit and the second memory area is accessed by the storage device through the second interface circuit and the fourth interface circuit.

Description

[0001] Cross References to Related Applications [0002] This patent application claims priority from Korean Patent Application 10-2017-0020634 filed on February 15, 2017, the entire contents of which are hereby incorporated by reference. Background technique [0003] The inventive concepts relate to semiconductor memory devices, and more particularly, to memory systems and methods of operating the same. [0004] The semiconductor memory device may be implemented using a semiconductor such as silicon Si, germanium Ge, gallium arsenide GaAs, indium phosphide InP, or the like. Semiconductor memory devices can be classified as volatile memory devices or nonvolatile memory devices. [0005] Generally, a memory system uses a memory device having a relatively high speed as a main memory. Memory systems may also use non-volatile memory devices as storage devices, which retain their stored data even when their power is interrupted. For example, the main memory may include a DRAM de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F13/16G06F12/02
CPCG06F12/0238G06F13/16G06F3/0658G06F3/061G06F3/0679G06F13/42G06F12/0246G06F1/3275G11C11/4074G06F12/0871G06F2212/7201G06F13/00
Inventor 金光贤
Owner SAMSUNG ELECTRONICS CO LTD