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Three-dimensional memristive Hindmarsh-Rose model circuit with hidden coexisting asymmetric behavior

An asymmetrical circuit technology, applied in CAD circuit design, electrical digital data processing, CAD numerical modeling, etc., to achieve the effect of clear circuit structure, easy theoretical analysis and circuit integration, and simple and easy to find components

Inactive Publication Date: 2018-08-21
CHANGZHOU UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The newly proposed memristive HR neuron model does not have any equilibrium point, but can exhibit hidden dynamical behavior with coexisting asymmetric attractors, which has not been reported in the existing literature on HR neuron models

Method used

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  • Three-dimensional memristive Hindmarsh-Rose model circuit with hidden coexisting asymmetric behavior
  • Three-dimensional memristive Hindmarsh-Rose model circuit with hidden coexisting asymmetric behavior
  • Three-dimensional memristive Hindmarsh-Rose model circuit with hidden coexisting asymmetric behavior

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Embodiment Construction

[0019] Mathematical modeling: a kind of three-dimensional memristive Hindmarsh-Rose model circuit construction with hidden coexistence asymmetric behavior of the present embodiment is as follows figure 1 shown. The invention is based on a two-dimensional Hindmarsh-Rose neuron model, and introduces an ideal magnetic control memristor by simulating the electrical activity of neurons under electromagnetic induction interference. For analysis and circuit experiment verification, the model can be described by a system of first-order ordinary differential equations as:

[0020]

[0021]Among them, the two variables x and y are the neuron membrane potential and the recovery variable (also known as the spike variable), respectively, and the constant term I is the externally applied current. The parameters a, b, c and d are four normal numbers, usually set as a=1, b=3, c=1 and d=5 respectively. new variable is the magnetic flux, representing the time integral of the neuronal mem...

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Abstract

The invention discloses a three-dimensional memristive Hindmarsh-Rose model circuit with a hidden coexisting asymmetric behavior. In order to better simulate the complex dynamic behavior of neuronal electrical activity under electromagnetic induction interference, the invention constructs a novel three-dimensional memristive Hindmarsh-Rose neuron model by introducing an ideal magnetic control memristor in a two-dimensional Hindmarsh-Rose neuron model, the model does not have any equilibrium point, and coexisting asymmetric attractors that can be generated by the model are hidden. At the same time, a circuit implementation scheme of the memristive Hindmarsh-Rose neuron model is proposed, and the circuit can be used to simulate the complex electrical activity of neurons.

Description

technical field [0001] The invention relates to the technical field of neuron models and circuit realization thereof, in particular to a circuit realization of a three-dimensional memristive Hindmarsh-Rose neuron model with hidden coexistence asymmetric behavior. Background technique [0002] People's research on neuroscience is based on neuron models. In the past 30 years, most neuron models have been simplified and expanded from the classic Hodgkin-Huxley model to reconstruct the electrical activity of neurons. The main kinetic properties, among which the two-dimensional Hindmarsh-Rose (HR) neuron model is effective and available for the kinetic analysis of the electrical activity of biological neurons. [0003] Since the electrical activity of neurons is closely related to the complex electrophysiological environment in the nervous system, the present invention proposes a novel three-dimensional memristive Hindmarsh-Rose (HR) neuron model. By introducing the ideal magnet...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/36G06F30/367G06F2111/10
Inventor 包伯成胡爱黄孙梦霞吴平业罗娇燕
Owner CHANGZHOU UNIV
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