Semiconductor structures and their methods of formation and operation

Abstract

The invention relates to a semiconductor structure and a forming method and a working method thereof, wherein the semiconductor structure comprises: a substrate, wherein the substrate comprises a plurality of discrete pixel regions and the substrate comprises a first surface and a second surface opposite to each other; a plurality of photosensitive elements respectively arranged on the substrate pixel region, wherein the photosensitive elements used for detecting a first light wave; a plurality of photo resistors respectively arranged on the pixel region of the first surface, wherein the photoresistors are used for detecting a second light wave and used for transmitting the first light wave. The wavelength of the second light wave is not equal to that of the first light wave. The photo resistors cover the corresponding photosensitive elements. The photo resistor comprises a first end and a second end which are opposite to each other; a first connection structure connected to the firstend; a second connection structure connected to the second end. The integration degree of the semiconductor structure is high.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and its forming method and working method. Background technique [0002] With the continuous improvement of semiconductor technology, CMOS image sensors (Image Sensor) and infrared light detectors, as a basic device for information acquisition, have been more and more widely used in modern society. [0003] CMOS image sensors are capable of detecting visible light; infrared light detectors are capable of detecting infrared light. In the fields of military and field detection, it is often necessary to detect both visible light and infrared light. In order to obtain images of visible light and infrared light, it is often necessary to obtain images of visible light through a CMOS image sensor, and to obtain images of infrared light using an infrared light detector. However, in the existing semiconductor structure, the CMOS image sensor...

AI Technical Summary

Problems solved by technology

However, in the existing semiconductor structure, the CMOS image sensor and the infrared light detector are separated from each other, resulting in low integration of the semiconductor structure.

[0004] In summary, the existing semiconductor structure has low integration

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