Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A closed-cavity PVDF film loudspeaker

A closed cavity and loudspeaker technology, applied in the direction of sensors, loudspeakers, electrical components, etc., can solve the problems of reducing the sound radiation of PVDF thin film loudspeakers, difficult driving of PVDF thin film loudspeakers, and noise pollution of loudspeakers, so as to improve noise pollution and increase sound quality. Pressure level, reduce the effect of sound radiation

Active Publication Date: 2020-04-03
NORTHWESTERN POLYTECHNICAL UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In view of the above shortcomings of the existing film speakers, this paper proposes a closed-cavity PVDF film speaker, which can effectively improve the sound radiation efficiency of the PVDF film speaker and reduce the sound radiation behind the PVDF film speaker to improve the driving difficulties of the PVDF film speaker. The problem of poor low-frequency effect and noise pollution behind the speaker, and the problem of reverberation after adding a back cavity can also be solved by the design of the present invention

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A closed-cavity PVDF film loudspeaker
  • A closed-cavity PVDF film loudspeaker
  • A closed-cavity PVDF film loudspeaker

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Embodiments of the present invention are described in detail below, and the embodiments are exemplary and intended to explain the present invention, but should not be construed as limiting the present invention.

[0033] In the present invention, the main body structure of the closed-cavity PVDF film loudspeaker comprises: the packaged PVDF film (see figure 1 Part No. 2), sound-absorbing material layer (see figure 1 No. 5 part) and fiberglass back cavity (see figure 1 Part No. 6). The PVDF film has double-sided electrodes (see figure 1 Part No. 1 in the middle), and the double-sided electrodes respectively lead to external electrodes (see figure 1 Part No. 3 in the middle), part of the external electrode is exposed when the insulation package is carried out. A sealant is used between the PVDF film and the back cavity (see figure 1 Part No. 4) is glued firmly. The sound-absorbing material and the bottom of the back cavity are pasted with transparent double-sided ad...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
radiusaaaaaaaaaa
angleaaaaaaaaaa
Login to View More

Abstract

The invention proposes a closed cavity type PVDF thin-film loudspeaker. The closed cavity type PVDF thin-film loudspeaker comprises a main structure and an impedance converter; the main structure comprises a PVD thin film, a sound absorbing material layer and a glass fiber reinforced plastics back cavity; the PVDF thin film has double-sided electrodes; the double-sided electrodes respectively leadout external electrodes; the PVDF thin film and the double-sided electrodes are subjected to insulation encapsulation, and parts of the external electrodes are exposed during the insulation encapsulation; an open surface of the glass fiber reinforced plastics back cavity is a cambered surface with a rectangular projection, and the PVDF thin film after being subjected to the insulation encapsulation is sealed and fixedly connected with the edge of the open surface of the glass fiber reinforced plastics back cavity through a sealant; the sound absorbing material layer is fixed inside the glassfiber reinforced plastics back cavity body, and the sound absorbing material layer is not in contact with the PVDF thin film; and the main structure is connected with an external standard power amplifier through the impedance converter. The closed cavity type PVDF thin-film loudspeaker provided by the invention can effectively improve the sound radiation efficiency of the PVDF thin-film loudspeaker and reduce the sound radiation behind the PVDF thin-film loudspeaker, so as to solve the problems of the driving difficulty of the PVDF thin-film loudspeaker, the poor low frequency effect and the noise pollution behind the loudspeaker.

Description

technical field [0001] The invention belongs to the field of loudspeaker equipment and a design method thereof, in particular to a closed-cavity PVDF film loudspeaker. Background technique [0002] PVDF piezoelectric film material has good water resistance, corrosion resistance and impact resistance. The speaker supported by PVDF piezoelectric film has the advantages of bendability, flat appearance and light weight. Compared with traditional piezoelectric ceramic materials, it has a wider frequency response range, lower acoustic impedance and higher dielectric constant. [0003] Korean published patent 10-2007-0025543 discloses a PVDF piezoelectric film. In this patent, the PVDF film adopts a rectangular structure, and uniform carbon nanotube materials are first coated on both sides of the film, and then grid-type or frame-type are printed. Conductive silver gel electrode structure. The low-frequency effect of the PVDF loudspeaker example in this patent is not ideal enough...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04R9/06H04R9/02
CPCH04R9/02H04R9/06H04R2400/11
Inventor 陈克安田旭华雷烨徐颖李晗
Owner NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products