Method for growing transition metal disulfide film
A technology of transition metals and disulfides, applied in the direction of metal material coating process, gaseous chemical plating, coating, etc., to achieve the effect of wide applicability
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[0032] The present invention provides a method for growing a transition metal dichalcogenide film. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0033] The method for growing a transition metal dichalcogenide film provided in this embodiment includes the following steps:
[0034] Using bis(N,N'-di-tert-butylacetamidino)iron(II) (Fe(amd) 2 ), bis(N,N'-di-tert-butylacetamido)cobalt(II) (Co(amd) 2 ) and bis(N,N'-di-tert-butylacetamidino)nickel(II) (Ni(amd) 2 ) as a metal precursor, H 2 S plasma as a co-reactant for MS in a home-made tubular ALD reactor 2 Atomic layer deposition (ALD) of (M=Fe, Co, Ni) thin films. The metal precursors were kept in separate glass containers, and they were heated to 70 ...
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