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Method for growing transition metal disulfide film

A technology of transition metals and disulfides, applied in the direction of metal material coating process, gaseous chemical plating, coating, etc., to achieve the effect of wide applicability

Active Publication Date: 2018-08-24
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method for growing transition metal dichalcogenide films, aiming at solving the problem of sulfuration with a metal-sulfur stoichiometric ratio close to 1:1 prepared by the existing ALD method. object problem

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  • Method for growing transition metal disulfide film
  • Method for growing transition metal disulfide film
  • Method for growing transition metal disulfide film

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Embodiment Construction

[0032] The present invention provides a method for growing a transition metal dichalcogenide film. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0033] The method for growing a transition metal dichalcogenide film provided in this embodiment includes the following steps:

[0034] Using bis(N,N'-di-tert-butylacetamidino)iron(II) (Fe(amd) 2 ), bis(N,N'-di-tert-butylacetamido)cobalt(II) (Co(amd) 2 ) and bis(N,N'-di-tert-butylacetamidino)nickel(II) (Ni(amd) 2 ) as a metal precursor, H 2 S plasma as a co-reactant for MS in a home-made tubular ALD reactor 2 Atomic layer deposition (ALD) of (M=Fe, Co, Ni) thin films. The metal precursors were kept in separate glass containers, and they were heated to 70 ...

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Abstract

The invention discloses a method for growing a transition metal disulfide film. The method is characterized in that a metal amidine compound is taken as a metal precursor, and a H2S plasma is taken asa sulfur source, so that pyrite FeS2, CoS2 and NiS2 films are synthesized through an ALD process. A deposition process for FeS2, CoS2 and NiS2 follows layer-by-layer ALD growth behaviors within a relatively wide deposition range, and can obtain a transition metal disulfide film which is very pure in component, is smooth in surface and is of a pyrite structure. Furthermore, FeS2, CoS2 and NiS2 films deposited through the ALD process can be deposited into grooves with depth-width ratios being 10 to 1 in a conformal mode, and therefore, the ALD process has a wide range of performing conformal film deposition on the 3D framework with a complex height-depth-width ratio, and has prospect applicability.

Description

technical field [0001] The invention relates to the technical field of film preparation, in particular to a method for growing a transition metal disulfide film. Background technique [0002] Pyrite-type transition metal dichalcogenides (expressed as MS 2 , where M=Fe, Co, Ni) can form a series of very useful compounds in many ways. Because the pyrite series compounds have the same crystal structure (space group: Pa-3), but the gradual increase of antibonding d-electrons in the conduction band is different, therefore, metal pyrites exhibit very different electric and magnetic nature. For example, iron pyrite (FeS 2 ) is a diamagnetic semiconductor, cobalt pyrite (CoS 2 ) is a itinerant electron ferromagnet, while pentlandite (NiS 2 ) is an antiferromagnetic semiconductor. These different material properties not only provide a model system platform for basic material science research on pyrite, but also provide a broader material engineering platform for various importa...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/455
CPCC23C16/305C23C16/45553
Inventor 王新炜国政
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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