Manufacturing method of array substrate
A manufacturing method and array substrate technology, which are applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as poor bulging and bulging of pixel electrodes, and achieve the advantages of preventing poor bulging, avoiding water vapor, and improving production yield. Effect
Active Publication Date: 2021-05-25
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
[0005] The manufacturing process of the existing array substrate includes the following steps: step 100, providing a substrate, and sequentially forming a TFT layer and an insulating layer covering the TFT layer on the substrate; step 200, patterning the insulating layer, forming a connection via hole exposing the drain of the TFT layer; forming a pixel electrode on the insulating layer, and the pixel electrode is in contact with the drain electrode of the TFT layer through the connection via hole, wherein, after patterning In the process of the insulating layer, the sulfur hexafluoride (SF 6 ) gas will react with the aluminum layer in the TFT layer to form the aluminum fluoride (ALF 3 ), the aluminum fluoride and water vapor further react to produce aluminum hydroxide, and when the pixel electrode is made, the aluminum hydroxide will decompose at high temperature to produce water vapor, so that the pixel electrode in the connection via hole bulges, resulting in a bad bulge
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[0030] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.
[0031] see Figure 6 and combine figure 1 , the present invention provides a method for manufacturing an array substrate, comprising the following steps:
[0032] Step S1 , providing a substrate 100 , and sequentially forming a TFT layer 1 and a first insulating layer 2 covering the TFT layer 1 on the substrate 100 .
[0033] Specifically, the substrate 100 is a glass substrate, and the TFT layer 1 may be a bottom gate TFT or a top gate TFT.
[0034] Specifically, see figure 1 , in the first embodiment of the present invention, when the TFT layer 1 is a bottom gate TFT, the TFT layer 1 includes: a first metal layer 10 located on the substrate 100, covering the first metal layer 10 and the second insulating layer 30 of the substrate 100 as ...
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The invention provides a method for manufacturing an array substrate. After the connection via hole between the pixel electrode and the TFT layer is manufactured, the TFT layer in the connection via hole is firstly etched with oxygen, and then Forming the pixel electrode in contact with the TFT layer through the connection via hole can avoid the generation of water vapor during the fabrication process of the pixel electrode, prevent the pixel electrode from bulging, and improve the production yield of the array substrate.
Description
technical field [0001] The present invention relates to the field of display technology, in particular to a method for manufacturing an array substrate. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. [0003] Most of the liquid crystal display devices currently on the market are backlight liquid crystal displays, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is to place liquid crystal molecules between two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates. The direction of the liquid crystal molecules ...
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IPC IPC(8): H01L21/84H01L27/12
CPCH01L27/124H01L27/1296
Inventor 周德利
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD