Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus

Abstract

A solid-state imaging device, a method for manufacturing the solid-state imaging device, and an electronic apparatus are disclosed. A pinned photodiode has a substrate having a first substrate side towhich light is illuminated and a second substrate side opposite the first substrate side, a photoelectric conversion part including a first conductivity type semiconductor layer buried into the substrate and having a photoelectric conversion function for the received light and a charge accumulation function, a second conductivity type separation layer formed in the side portion of the first conductivity type semiconductor layer in the photoelectric conversion part, and one charge transfer gate part capable of transferring the charge accumulated in the photoelectric conversion part. The photoelectric conversion part, in at least a portion of the first conductivity type semiconductor layer, includes at least one second-conductivity type semiconductor layer forming at least one sub-area in adirection perpendicular to a normal line of the substrate and having a junction capacitance component together with the first conductivity type semiconductor layer.

Description

[0001] The present invention contains subject matter related to Japanese Patent Application JP2017-33802 filed in Japan Patent Office on Feb. 24, 2017, the entire content of which is hereby incorporated by reference. technical field [0002] The present invention relates to a solid-state imaging device, a method of manufacturing the solid-state imaging device, and electronic equipment. Background technique [0003] As solid-state imaging devices (image sensors) using photoelectric conversion elements that detect light to generate charges, CCD (Charge Coupled Device) image sensors and CMOS (Complementary Metal Oxide Semiconductor) image sensors have been put into practical use. [0004] CCD image sensors and CMOS image sensors are widely used as part of various electronic devices such as digital cameras, video cameras, surveillance cameras, medical endoscopes, personal computers (PCs), mobile phones and other portable terminal devices (mobile devices). . [0005] The CCD ima...

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Problems solved by technology

[0024] However, in the case of a pixel with a relatively large size and a relatively large aspect ratio, for example, about 3 μm□, the accumulated charge is mainly limited to the lateral pn junction capacitance (junction capacitance) in a portion close to the surface of the photodiode (PD), and it is difficult to Efficiently increase storage capacity

[0025] In addition, when the photoelectric conversion part (layer) of the photodiode (PD) part is simply divided into a plurality, for example, into two, since the transfer gate becomes multiplied, there is a gap in the charge-to-voltage conversion part. The disadvantage that the capacitance increases, the conversion efficiency deteriorates, and the noise characteristic deteriorates as a result

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