A modeling method and circuit model based on spice cross-shaped hall simulation model

Abstract

The invention relates to a modeling method based on a Spice cross-shaped Hall simulation model. According to various relationship curve fittings in the technical manual, the relationship between the Hall output and each influencing quantity is obtained, and the cross-shaped Hall is established by using LTSpice software. Seoul simulation model. Each output parameter in the established cross-shaped circuit model is controlled according to the parameter function obtained in the aforementioned modeling method. The circuit model established by this modeling method considers many factors such as temperature and nonlinear resistance, and can accurately describe the differences between different Halls. Because the source of parameters in the circuit model is very easy to obtain, it has good practicability. And by setting the parameters in the circuit model, it is convenient to change the performance of the Hall, and then it is convenient to complete the reliability analysis work such as Monte Carlo analysis.

Description

technical field [0001] The invention relates to a modeling method based on a Spice cross-shaped Hall simulation model, and also relates to a circuit model based on a Spice cross-shaped Hall simulation model. Background technique [0002] The Hall magnetic field sensor is a device that uses the principle of the Hall effect to realize magnetoelectric conversion, and is often used for the detection of magnetic fields. Since Hall element suppliers do not provide Hall simulation models, circuit designers often need to borrow models from literature or build their own Hall models to simulate Hall sensors. [0003] The authorized announcement number is CN102236736B (application number is 201110191728.3) Chinese invention patent "A simulation method for the circuit model of a cross-shaped CMOS integrated Hall magnetic sensor" discloses a circuit model of a Hall magnetic sensor, published in the journal "Instrument The paper "Simplified simulation model of cross-shaped CMOS integrate...

AI Technical Summary

Problems solved by technology

[0003] The authorized announcement number is CN102236736B (application number is 201110191728.3) Chinese invention patent "A simulation method for the circuit model of a cross-shaped CMOS integrated Hall magnetic sensor" discloses a circuit model of a Hall magnetic sensor, published in the journal "Instrument The paper "Simplified simulation model of cross-shaped CMOS integrated Hall magnetic sensor" published in the 10th issue of "Technology and Sensors" in 2011 also discloses a simulation model of a Hall magnetic sensor. These Hall magnetic sensor models can simulate active The various DC, AC and transient characteristics of the sensor are convenient for application in engineering circuits, but the simulation model of the Hall magnetic sensor disclosed in the aforementioned prior art needs to know the Hall mobility and the doping of the N well when it is established. Concentration and other 8 process parameters and 2 device geometric parameters, but in practical applications, Hall element manufacturers based on their own confidentiality requirements, only give the relationship curve between the Hall output and each influencing quantity in the technical manual, which is not directly Provide the above parameters

In this way, the Hall magnetic sensor model disclosed in the prior art usually adopts the general parameters in the literature, which cannot reflect the differences between different Hall elements

In fact, the performance of different Hall elements varies greatly

The Hall magnetic sensor model in the aforementioned disclosure does not fully consider the influence of temperature, nonlinear resistance, etc. on the Hall output. The Hall magnetic sensor model is not accurate enough, which reduces the accuracy of the simulation.

Images