Polycrystalline silicon ingot preparation process and polycrystalline silicon ingot thereof
A polycrystalline silicon ingot and preparation process technology, applied in the directions of polycrystalline material growth, crystal growth, post-processing details, etc., can solve the problem that the quality of the polycrystalline silicon ingot has a great influence on the quality of the ingot product, the stress distribution state of the ingot product is affected, and the impurity high temperature solid phase is promoted. Diffusion and other problems, to achieve the effect of improving product quality, increasing ingot yield, and reducing the length of the red zone
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Embodiment 1
[0038] Polycrystalline silicon ingot 1# is prepared by the following steps:
[0039] 1) Charging: Fill the crucible with 1200kg polysilicon raw materials, and transfer the crucible to the ingot furnace;
[0040] 2) Heating and melting: Exhaust the ingot furnace to a vacuum, heat it to 1535°C, and melt the silicon material; when the insulation cage is gradually raised to 5 cm in the later stage of the melting stage, open the extraction plate;
[0041] 3) Crystallization: In the first stage, the temperature drops to 1432℃ to start crystallization, the ascending rate of the heat insulation cage is controlled to 0.074mm / min, the opening rate of the drawing plate is 0.37mm / min, the duration is 270min, and the temperature drops to 1426℃ at the end. , The height of the heat insulation cage is 7cm, and the opening degree of the drawing board is 19.98cm; the second stage continues to cool down, the opening rate of the drawing board is 0.146mm / min, the duration is 32h, the temperature drops to...
Embodiment 2
[0045] Polysilicon ingot 2#, prepared by the following steps:
[0046] 1) Charging: Fill the crucible with 1200kg polysilicon raw materials, and transfer the crucible to the ingot furnace;
[0047] 2) Heating and melting: Exhaust the ingot furnace to a vacuum, heat it to 1535°C, and melt the silicon material; when the insulation cage is gradually raised to 5 cm in the later stage of the melting stage, open the extraction plate;
[0048] 3) Crystallization: In the first stage, the temperature drops to 1431℃ to start crystallization. The rising rate of the heat insulation cage is controlled to 0.076mm / min, the opening rate of the drawing plate is 0.39mm / min, the duration is 280min, and the temperature drops to 1425℃ at the end. , The height of the heat insulation cage is 7.13cm, and the opening degree of the drawing plate is 21.84cm; the second stage continues to cool down, the opening rate of the drawing plate is 0.151mm / min, the duration is 30h, and the temperature drops to 1415℃ at ...
Embodiment 3
[0052] Polycrystalline silicon ingot 3#, prepared by the following steps:
[0053] 1) Charging: Fill the crucible with 1200kg polysilicon raw materials, and transfer the crucible to the ingot furnace;
[0054] 2) Heating and melting: Exhaust the ingot furnace to a vacuum, heat it to 1535°C, and melt the silicon material; when the insulation cage is gradually raised to 5 cm in the later stage of the melting stage, open the extraction plate;
[0055] 3) Crystallization: In the first stage, the temperature drops to 1433℃ to start crystallization, the rising rate of the heat insulation cage is controlled to 0.084mm / min, the opening rate of the drawing plate is 0.45mm / min, the duration is 270min, and the temperature drops to 1427℃ at the end , The height of the heat insulation cage is 7.27cm, and the opening degree of the drawing plate is 24.3cm; the second stage continues to cool down, the opening rate of the drawing plate is 0.121mm / min, the duration is 33h, and the temperature drops to...
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