Non-destructive read ferroelectric multi-logic state memory cell and write/read/erase operation method for storing data based on domain wall density
A technology for storing data and memory cells, applied in the field of information technology storage, can solve the problem that the position, configuration and thickness of domain walls in ferroelectric thin films are difficult to control, difficult to realize the thickness of ferroelectric domain walls, and to limit multiple logic states of ferroelectric domain walls. Storage performance and other issues
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[0036] The following introduces some of the possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, but are not intended to identify key or decisive elements of the present invention or limit the scope of protection.
[0037] In the drawings, for the sake of clarity, the thicknesses of layers and regions are exaggerated, and the dimensional proportional relationship among the various parts in the illustration does not reflect the actual dimensional proportional relationship.
[0038] In the following embodiments, for clarity of description, the domain direction or polarization direction is exemplarily given, but it should be understood that the domain direction or polarization direction of the ferroelectric memory is not limited to the embodiment shown in the figure. out direction.
[0039] figure 1 Shown is a schematic cross-sectional structure diagram of a non-destructive read ferroelectric multi-logic sta...
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