Ferroelectric multi-logic state memory cell and read/write/erase operation method thereof
A storage unit and logic storage technology, which is applied in the field of information technology storage, can solve the problems of poor controllability of ferroelectric domain wall conductivity, difficulty in controlling the thickness, position, configuration and thickness of ferroelectric domain walls, etc.
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Embodiment 2
[0046] The structure of the memory cell in embodiment 2 is the same as that in embodiment 1, except that the material of the lower dielectric layer (1221 and 1222) is barium titanate, and the thickness is 10 nm. The upper dielectric layer (1211 and 1212) is strontium titanate with a thickness of 18nm. The material of the ferroelectric thin film is lead titanate, and 10 different logic states can be obtained in the memory cell.
Embodiment 3
[0048] The structure of the memory cell in embodiment 3 is the same as that in embodiment 1, except that the material of the lower dielectric layer (1221 and 1222) is strontium titanate, and the thickness is 8nm. The upper dielectric layer (1211 and 1212) is barium titanate with a thickness of 8nm. The material of the ferroelectric film is barium titanate, and 12 different logic states can be obtained in the memory cell.
Embodiment 4
[0050] The structure of the memory cell in embodiment 3 is the same as that in embodiment 1, except that the material of the lower dielectric layer (1221 and 1222) is magnesium oxide, and the thickness is 8nm. The upper dielectric layer (1211 and 1212) is titanium oxide with a thickness of 8nm. The material of the ferroelectric film is barium titanate, and 16 different logic states can be obtained in the memory cell.
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