A kind of light-emitting diode and its preparation method

A technology of light-emitting diodes and light-emitting layers, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of broken pins, no protection mechanism for anode pins and cathode pins, and achieve the effect of preventing breakage

Active Publication Date: 2020-04-14
RUGAO DACHANG ELECTRONICS
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Problems solved by technology

[0003] However, the general light-emitting diodes are not equipped with a protection mechanism for the anode pin and the cathode pin during transportation, so that the light-emitting diodes are squeezed during transportation, resulting in broken legs. In view of this defect, we design a A light-emitting diode to solve the problem of pin protection when the light-emitting diode is transported

Method used

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  • A kind of light-emitting diode and its preparation method
  • A kind of light-emitting diode and its preparation method
  • A kind of light-emitting diode and its preparation method

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] see Figure 1-6 , the present invention provides a light-emitting diode, including a base 1, a molded resin lens 2, a metal nanomaterial coating layer 3, a light-emitting layer 4, an LED chip 5, an anode pin 6, a cathode pin 7, a fixed protective seat 8, The fixing mechanism 18 and the buffer protection mechanism 31, the top center of the base 1 is fixed with an LED chip 5 by screws, the top of the LED chip 5 is equipped with a light-emitting layer 4, a...

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Abstract

The invention discloses a light-emitting diode and a preparation method thereof. The light-emitting diode is composed of a pedestal, a molded resin lens, a metal nano-material coating layer, a light-emitting layer, an LED chip, an anode pin, a cathode pin, a fixed protection base, a fixation mechanism and a buffer protection mechanism. The LED chip is fixed at the center of the top of the pedestalby a screw; the light-emitting layer is installed at the top of the LED chip; the metal nano-material coating layer is arranged at the top of the light-emitting layer; and the molded resin lens coating the metal nano-material coating layer, the light-emitting layer, and the LED chip is arranged at the top of the pedestal. The buffer protection mechanism consists of a pin protection hole, a buffergroove, a fixed block, a moving rod, an annular fixed sleeve, a first rotating rod, a damping spring, a second rotating rod, a second reset spring, a chute, a moving slot, and a second clamp plate. According to the light-emitting diode, the anode pin and the cathode pin are buffered and protected well.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a light emitting diode and a preparation method thereof. Background technique [0002] Light Emitting Diode (Light Emitting Diode) is a light emitting device that emits ultraviolet, visible or infrared light when a forward voltage is applied across a semiconductor p-n junction. It is a new generation of solid light source. Because of its small size, long life, low driving voltage, fast response, shock resistance, heat resistance and other characteristics, since the first light-emitting diode came out in 1964, people have not stopped the pace of research and development. With the development of light-emitting materials The development and improvement of semiconductor manufacturing process, as well as the introduction of distributed Bragg emission structure, optical microcavity and quantum well structure in the process of chip growth, have continuously improved the ef...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/00
CPCH01L33/005H01L33/48
Inventor 王志敏黄丽凤
Owner RUGAO DACHANG ELECTRONICS
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