Device and method for measuring thermal stress birefringence coefficient of laser crystal
A technology of laser crystals and measurement methods, applied in measurement devices, material analysis by optical means, instruments, etc., can solve the problems of lack of and inability to measure the thermal stress birefringence coefficient of crystals, achieve accurate and real-time results, avoid errors, The effect of high measurement accuracy
Active Publication Date: 2021-02-19
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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Problems solved by technology
[0009] However, the above measurement method can only be used to detect the fixed crystal birefringence coefficient in the non-operating state
The thermal stress birefringence changes with the load of the laser. For example, once the external field effect of the laser is withdrawn, the deformation of the optical crystal will also change accordingly. Under the condition of no laser load, it is impossible to measure the crystal heat when there is a load. Stress Birefringence
[0010] The prior art lacks a device or method that can measure the birefringence coefficient of laser crystal thermal stress in real time during work
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[0108] In a specific example, see figure 1 and 2 , the laser crystal real-time thermal stress birefringence detection device provided by the present invention includes a first pump light source 110, a second pump light source 120, a first power meter 180, a second power meter 190, a detection light source 210, and a polarizer 220 , a spectroscope 240 , a first analyzer 251 , a second analyzer 252 and a light detection device 270 . The sample 160 is a cube in this embodiment, but obviously it can also be in other various shapes. A first pumping light source 110 and a second pumping light source 120 are respectively provided on the laser incident surface facing the sample 160 . The laser light generated by the first pumping light source 110 and the second pumping light source 120 is focused by the focusing optical path 130 and irradiated onto the point to be detected inside the sample 160 . The laser light enters the first power meter 180 and the second power meter 190 after ...
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Abstract
The invention discloses a device and method for measuring thermal stress birefringence coefficient of laser crystal. The device comprises an analog optical path and a detection light path, wherein thedetection light path and the analog optical path are all focused on a test point of a sample. After the sample is placed in the device, the power of the loaded laser is adjusted, and the thermal stress birefringence coefficient of the sample under different load conditions can be obtained. The method comprises the following steps of: placing a sample in the device as described above, opening an analog light path to focus laser light to a test point in a sample to generate thermal stress birefringence of a sample; step S200, the detection light is opened to focus the detection light on the test point, and the light splitting light intensity which is separated from the sample and is detected by the analyzer is recorded; step S300: the phase delay amount phi is calculated according to the following formula: (Ip-Ic) / (Ip+Ic)=cos phi, shown in the description, where Ip and Ic are light-splitting light intensity. The method utilizes a polarization bias detection light; the phase retardationamount phi generated by the laser crystal in which thermal stress birefringence occurs is detected. The method has accurate measurement results and avoids manual errors.
Description
technical field [0001] The invention relates to a laser crystal thermal stress birefringence coefficient measuring device and a method thereof, belonging to the field of measuring material birefringence. Background technique [0002] At present, laser technology is developing rapidly, and its application scope involves military, aerospace, medical, communication and many other fields. It is one of the most competitive high-tech fields in the world. Laser materials are the basis for the development of laser technology, and their materials are mainly optical crystals. [0003] With the development of high-energy lasers, higher and higher requirements are put forward for crystal materials, and crystal materials inevitably have defects due to the manufacturing process (growth process) and the existence of raw material impurities. Defects have become an important bottleneck restricting the application of crystals in the field of strong lasers. It not only brings troubles to the...
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IPC IPC(8): G01N21/23
CPCG01N21/23
Inventor 吴少凡徐鸿锋王帅华郑熠黄鑫
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI