Multilayer metal mask seed layer for glass HF etching and manufacturing method thereof

A multi-layer metal and metal mask technology, applied in the field of mask layers, can solve problems such as poor effect, uneven corrosion, pinholes, etc., and achieve the effect of avoiding undercutting, good uniformity and outstanding effect

Pending Publication Date: 2018-09-25
SHENZHEN UNIV
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Different mask design processes will have an important impact on the results after etching. The current existing mask structures and processes often cause undercutting and uneven corrosion, and pinholes appear, and the effect is not very good.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multilayer metal mask seed layer for glass HF etching and manufacturing method thereof
  • Multilayer metal mask seed layer for glass HF etching and manufacturing method thereof
  • Multilayer metal mask seed layer for glass HF etching and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Such as figure 1 Shown: a kind of multi-layer metal mask seed layer that is used for glass HF corrosion of the present embodiment, described metal mask is four layers, from glass substrate 100 upwards successively is the first Cr layer 101, the first Cu layer 102, a second Cr layer 103, and a second Cu layer 104, forming a complex mask layer structure of Cr / Cu / Cr / Cu. Both the first Cr layer 101 and the second Cr layer 103 have a thickness of 50 nm, and the first Cu layer 102 and the second Cu layer 104 have a thickness of 200 nm.

[0026] Such as figure 2 As shown, the preparation method of the multilayer metal mask seed layer of the present embodiment is to go through the following steps in sequence:

[0027] Step 1: Sputter a first Cr layer 101 with a thickness of 50 nm on the surface of a clean and dry glass substrate 100 by magnetron sputtering;

[0028] The second step: sputtering a first Cu layer 102 with a thickness of 200 nm on the basis of the first step; ...

Embodiment 2

[0041] When the thicknesses of each layer of the prepared Cr / Cu / Cr / Cu multilayer mask layer are 10nm / 100nm / 10nm / 100nm, the others are the same as in Example 1.

Embodiment 3

[0043] When the thicknesses of each layer of the obtained Cr / Cu / Cr / Cu multilayer mask layer are 100nm / 300nm / 100nm / 300nm respectively, the others are the same as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a multilayer metal mask seed layer for glass HF etching and a manufacturing method thereof. The multilayer metal mask seed layer uses a magnetron sputtering method to sputter multiple metal films on a clean glass surface so that a complex mask layer structure of Cr / Cu / Cr / Cu is orderly formed from the glass substrate to top. The first and third Cr layers have thickness of 10to 100 nm, and the second and fourth Cu layers have thickness of 100 to 300 nm. The structure of the multi-layer metal mask seed layer can play a good masking role in the process of glass HF corrosion, minimize the occurrence of pinhole phenomenon in the glass corrosion process, prevent the occurrence of undercutting phenomenon and achieve good corrosion effects.

Description

technical field [0001] The invention relates to a mask layer for glass HF corrosion, in particular to a multi-layer metal mask seed layer for glass HF corrosion and a manufacturing method thereof. Background technique [0002] Glass, a very common material in daily life, is widely used in many industrial fields such as construction, daily use, chemical industry, medical treatment, electronics, automobile and instrumentation. It is formed by melting silicon dioxide (SiO2) and other chemical substances. Glass has good hardness and transparency, and is often used as a processing substrate or surface packaging material for various devices, and is also widely used in various MEMS (Micro-Electro-Mechanical System, Micro-Electro-Mechanical System) devices and optoelectronic devices. In photovoltaic cells, glass is currently the most commonly used surface sealing cover or bottom substrate material, called photovoltaic glass. [0003] At present, there are four main categories of fi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/36
CPCC03C17/3639C03C17/3649C03C2218/156
Inventor 陈乐钱正芳孙一翎舒国响陈肇聪
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap