SiC Mosfet reliability and high-temperature aging test device

Abstract

The invention discloses a SiC Mosfet reliability and high-temperature aging test device which comprises an aging temperature control box, a voltage detector, a current detector and a controller, wherein the output port of the controller is connected with the aging temperature control box, a salt mist sprayer, a water sprayer and a water mist sprayer through control lines, the controller comprisesa memory, a processor and a computer program which is stored on the memory and can run on the processor, the processor executes the program to achieve the following steps: 1, performing the test undera humid and hot impact environment; 2, performing the test under a rain environment; 3, performing the test under a high-salinity environment; 4, performing the test under a high-humidity environment; and 5, performing the single-cycle high-temperature aging. The method has the technical effects that the reliability test of the SiC Mosfet under the environment of multiple factors is achieved, when the SiC Mosfet is subjected to the high-temperature aging test, the thermal shock state is set, the effective experiment time is obtained, and the experiment precision is improved.

Description

technical field [0001] The invention belongs to the technical field of component testing, and in particular relates to a SiC Mosfet reliability and high-temperature aging testing device. Background technique [0002] SiC Mosfet is used as an electronic component of a power switch, and its working temperature is usually 155°C~175°C, which requires it to have certain high temperature resistance characteristics. And the working environment of transformers for power grids is outdoors, and power semiconductor devices will generally be used in transformers for power grids. In view of the fact that SiC Mosfets are more and more widely used in industry and power grids, they are reliable in harsh environments such as high humidity, salt spray, and rain. Methods of sex testing are becoming more and more important. [0003] At present, the test conditions of SiC Mosfet reliability test in the simulated environment are single, such as rain simulation test, high salinity simulation test...

AI Technical Summary

Problems solved by technology

[0003] At present, the test conditions of SiC Mosfet reliability test in the simulated environment are single, such as rain simulation test, high salinity simulation test, without comprehensive environmental simulation, SiC Mosfet reliability test cannot be carried out in the environment of comprehensive factors

In addition, for the SiC Mosfet high temperature aging test, the heating time is not considered when calculating the step time, which reduces the accuracy of the test

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