A self-bonding silicon carbide refractory material and its liquid phase sintering preparation method
A refractory material and silicon carbide technology, which is applied in the field of self-bonding silicon carbide refractory material and its liquid phase sintering preparation, can solve the problems that the strength and density of the product are difficult to be effectively improved, and the ability to promote sintering is limited, so as to improve product quality. and thermal shock resistance, avoid low-strength problems, easy-to-achieve effects
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Embodiment 1
[0021] 1. A kind of self-bonding silicon carbide refractory material in this embodiment, its raw material composition is:
[0022]
[0023] 2. The liquid phase sintering preparation method of the above-mentioned self-bonding silicon carbide refractory material in this embodiment is as follows:
[0024] After mixing the raw materials according to the above proportions, add a PVA solution (concentration of 5wt%) that is 8wt% of the total amount of raw materials and mix evenly. After entering the kiln, the moisture content is less than 0.5%, and then fired at a temperature of 1420 ° C for 2 hours to obtain self-bonded silicon carbide refractories, such as figure 1 As shown, the material structure is dense and the number of pores is small. The water absorption of the material is 2.6%.
Embodiment 2
[0026] 1. A kind of self-bonding silicon carbide refractory material in this embodiment, its raw material composition is:
[0027]
[0028] 2. The liquid phase sintering preparation method of the above-mentioned self-bonding silicon carbide refractory material in this embodiment is as follows:
[0029] After mixing the raw materials according to the above proportions, add a PVA solution (concentration of 5wt%) that is 10wt% of the total amount of raw materials and mix evenly. After entering the kiln, the moisture content is less than 0.5%, and then fired at a temperature of 1400°C for 1 hour to obtain a self-bonded silicon carbide refractory material.
Embodiment 3
[0031] 1. A kind of self-bonding silicon carbide refractory material in this embodiment, its raw material composition is:
[0032]
[0033] 2. The liquid phase sintering preparation method of the above-mentioned self-bonding silicon carbide refractory material in this embodiment is as follows:
[0034] After mixing the raw materials according to the above proportions, add a PVA solution (concentration of 5wt%) that is 9wt% of the total amount of raw materials and mix evenly. After entering the kiln, the moisture content is less than 0.5%, and then it is fired at a temperature of 1360°C for 1 hour to obtain a self-bonded silicon carbide refractory material.
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Abstract
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