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Auxiliary device for detecting sapphire crystal bar defects

A defect detection and auxiliary device technology, which is applied in the direction of optical detection of defects/defects, can solve the problems of low detection efficiency, section edge collapse, etc., and achieve the effect of improving detection efficiency and avoiding edge collapse

Pending Publication Date: 2018-10-09
HARBIN AURORA OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention studies the problems of low defect detection efficiency of traditional sapphire crystal ingots, which easily lead to section collapse and the like, and provides an auxiliary device for defect detection of sapphire crystal ingots

Method used

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  • Auxiliary device for detecting sapphire crystal bar defects
  • Auxiliary device for detecting sapphire crystal bar defects
  • Auxiliary device for detecting sapphire crystal bar defects

Examples

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Embodiment 1

[0023] Example 1: Combining Figure 2-4 , the present embodiment is a support-type rotating device for driving crystal ingots, the structure mainly includes: a base 6 structure in the shape of a "concave", and the four corners are connected to the rolling bearing journal 7, the journal is a cylinder, and the bearing inner ring of the rolling bearing 5 can be 9 is fixed on the base, and the rolling bearing outer ring 8 is rotatable to drive the ingot to rotate the tooling to install a pressure sensor, and the sensor is connected to the laser through an external circuit. The length of the support type driven crystal ingot rotating tool base is 180mm, the width is 100mm, the rolling bearing journal is cylindrical, and the length is 12mm longer than the width of the rolling bearing inner ring; the up and down movement range of the bracket is 120mm, and the height of the laser beam is higher than that of the driving crystal ingot rotating tooling 70mm.

Embodiment 2

[0024] Example 2: Combining Figure 5-7 , the present embodiment is a drum-type rotary device for driving crystal ingots, and its structure mainly includes: a base 10 in a "concave" shape, and a long cylindrical roller bearing 11 connected to the upper sides of the "concave"-shaped base Ring 13, and the outer ring 12 of the bearing can be rotated to drive the ingot rotating tool to install a pressure sensor, which is connected to the laser through an external circuit. The length of the base of the roller-type driven ingot rotating tooling is 110mm, the width is 100mm, and the length of the long cylindrical roller bearing is 90mm; the up and down movement range of the bracket is 140mm, and the height of the laser beam is 65mm higher than that of the driving ingot rotating tooling.

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Abstract

The invention relates to an auxiliary device for detecting sapphire crystal bar defects. The auxiliary device comprises a crystal bar driving rotating tool, a pressure sensor, a laser and a bracket, wherein the crystal bar driving rotating tool has two structures, including a support structure and a drum structure, the support structure is suitable for long sapphire crystal bars, and the drum structure is suitable for short sapphire crystal bars. The pressure sensor is mounted under the crystal bar driving rotating tool, and is connected to the laser through an external circuit. When a crystalbar is placed in the auxiliary device, the laser can be automatically turned on to be in a working state. The auxiliary device can drive a large-size sapphire crystal bar body at a fixed position torotate and the laser to be switched on automatically, save manpower and improve the detection efficiency in the process of detecting crystal bar defects, and effectively solve the problem of end surface collapse generated by conventional manual rotation.

Description

technical field [0001] The invention relates to an auxiliary device for defect detection of sapphire crystal rods, in particular to the field of sapphire crystal rod processing. Background technique [0002] Since the quality of the sapphire substrate substrate has a great influence on the growth of the subsequent GaN epitaxial layer and the performance and yield of the blue light diode, the ultra-high brightness LED requires the sapphire substrate material to be in an ideal state, that is, the crystal lattice is complete, Free from any processing defects. [0003] The sapphire wafers used in actual production are all made of crystal rods after cutting and then grinding and polishing. Due to the high hardness of sapphire, the polishing rate is also very low, and the processing takes several hours. 20% of wafers have deep marks or internal defects on the surface, resulting in rework or even scrapping. In order to reduce the processing cost, it is necessary to detect and mar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/88
CPCG01N21/88
Inventor 左洪波杨鑫宏李铁王芳
Owner HARBIN AURORA OPTOELECTRONICS TECH
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