A method, control device and storage system for improving flash wear life
A wear life and control device technology, applied in the direction of memory system, memory architecture access/allocation, data processing input/output process, etc., can solve problems such as ignoring CBE information, achieve wide application prospects, delay damage speed, and improve wear The effect of longevity
Active Publication Date: 2021-02-09
南京道熵信息技术有限公司
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Problems solved by technology
[0010] The current status is that these functional modules only use the PE information of the physical block (Flash Blocks) and the hot and cold information (write frequency) of the logical address (LBA) of the user data, while ignoring the CBE of each physical Block / Page information
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[0048] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0049] Such as image 3 As shown, the embodiment of the present invention discloses a method based on the original bit error rate RBER and the corrected bit error number CBE to improve the wear life of Flash, by adjusting the read level threshold and the update frequency of matching data and the Endurance wear of Flash. To achieve the purpose of prolonging the life of the Flash. On the one hand, this method is: collect the original bit error rate of different Page / Block on each Flash chip, compare the RBER with the historical data, and when it increases to a certain level, start the algorithm for adjusting the threshold value of the Page / Block read level, thereby Lower the RBER. Since the read level threshold affects RBER in turn, forming a closed-loop feedback mechanism, it is said that adjusting the read level threshold through RBER is a fe...
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The invention discloses a method for improving the wear life of Flash, a control device and a storage system. The method includes: collecting the original bit error rate RBER and the corrected bit error number CBE of different Block / Page on each Flash chip; when the RBER increases to a certain When the level is high, the optimal read level threshold of the corresponding Block / Page is calculated and written into the corresponding Flash chip; and the idle Block / Page is classified according to the CBE, and the Block / Page with a lower CBR is assigned to the Block / Page with a higher update frequency. For the data, the Block / Page with higher CBR is allocated to the data with low update frequency. The present invention reduces the RBER by adjusting the read level threshold on the one hand, and on the other hand delays the damage speed of the block by matching the updating characteristics of the data with the Endurance wear of the Flash and improves the wear life of the Flash. The invention can be applied to many fields such as solid-state hard disks, disk arrays, solid-state caches, distributed storage systems, and big data applications, and has broad application prospects.
Description
technical field [0001] The invention belongs to the field of storage technology, and relates to a method, a control device and a storage system for improving the wear life of NAND Flash, and in particular to using the original bit error rate and the error rate after error correction to automatically adapt to the adverse effects caused by Flash wear , by adjusting the read level threshold (feedback strategy) and matching data update characteristics and Flash Endurance wear (feedforward strategy), to achieve the purpose of extending the life of Flash. Background technique [0002] NAND Flash (flash memory) is a non-volatile random access storage medium, based on the floating gate (FloatingGate) transistor design, through the floating gate to latch the charge, the charge is stored in the floating gate, they are in the case of no power supply can still be maintained. NAND Flash chips have been widely used in disk systems, such as solid-state drives (SSD), NVM-e solid-state driv...
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IPC IPC(8): G06F3/06
CPCG06F3/0616G06F3/0634G06F3/0638G06F3/064G06F3/0649G06F3/0653G06F3/0655G06F3/0679G06F2212/7205G06F12/0246
Inventor 胡晓宇
Owner 南京道熵信息技术有限公司