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Semiconductor device

A technology for semiconductors and devices, applied in the field of semiconductor devices with enhanced operating margins and reduced power consumption, and can solve problems such as process variations

Active Publication Date: 2022-02-25
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such differences in operating current characteristics (or performance characteristics) of transistors may be caused by, for example, process variations

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0029] Hereinafter, embodiments according to the present invention will be described in more detail with reference to the accompanying drawings. Although the present invention has been described with reference to a number of exemplary embodiments thereof, it should be understood that numerous other modifications and variations can be devised by those skilled in the art that will fall within the spirit and scope of this invention.

[0030] Such as figure 1 As shown, a semiconductor device according to an embodiment may include: a first mode signal generating circuit 1 , a second mode signal generating circuit 2 and a third mode signal generating circuit 3 .

[0031] The first mode signal generation circuit 1 may generate the first mode signal MODE1 in response to the command CMD. The first mode signal generation circuit 1 can generate the first period signal PD1 by command CMD (see Figure 5 ) and the first delay period signal PDd1 (see Image 6 ), to generate the first mode...

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Abstract

The semiconductor device includes: a first mode signal generation circuit adapted to generate a first mode signal in response to a command, during a first period determined from a current characteristic of the first MOS transistor more than a second period determined by the first passive element In the longer case, the first mode signal is enabled; and a second mode signal generating circuit adapted to generate the second mode signal in response to the command, for a third period of time determined by the second passive element than according to the first If the fourth period determined by the current characteristics of the two MOS transistors is longer, the second mode signal is enabled.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2017-0034873 filed with the Korean Intellectual Property Office on March 20, 2017, the entire contents of which are hereby incorporated by reference as if set forth in full. technical field [0003] The present invention relates generally to a semiconductor device, and more particularly, to a semiconductor device capable of enhancing operation margin and reducing power consumption. Background technique [0004] The performance characteristics of MOS transistors based on device current can be classified into typical state, slow state and fast state. Typical states represent transistors that are included in a typical group that falls within a range of performance characteristics based on device current, typically desired by manufacturers in order to meet semiconductor device performance requirements. The slow state indicates transistors included in a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/22
CPCG11C7/22H03K5/06H03K5/134H03K2005/00195H03K2005/00019G11C7/222H03K5/135G06F1/3225H03K2005/00071H03K3/012G01R31/317
Inventor 金庚焕李东郁
Owner SK HYNIX INC