Display panel

Abstract

The invention discloses a display panel. A thin film transistor substrate of the display panel comprises a bottom plate, a gate layer, a gate dielectric layer, a semiconductor layer, a first electrodelayer, a first passivation layer, a second passivation layer, a through hole and a second electrode layer, wherein the gate layer is arranged on the bottom plate, the semiconductor layer is arrangedon the bottom plate, the gate dielectric layer is arranged between the gate layer and the semiconductor layer, the first electrode layer is arranged on the semiconductor layer, the first passivation layer is arranged on the first electrode layer, the second passivation layer is arranged on the first passivation layer, the through hole penetrates through the first passivation layer and the second passivation layer so as to expose a part of the first electrode layer and a part of the first passivation layer, the second electrode layer is arranged on the second passivation layer and is electrically connected with the first electrode layer via the through hole, the part of exposed first passivation layer comprises a first side edge and a first upper edge, the second passivation layer comprisesa second side edge, the first upper edge is arranged between the first side edge and the second side edge, and the second electrode layer is in contact with the first upper edge.

Description

[0001] This application is a divisional application of a Chinese invention patent application (application number: 201410048562.3, application date: February 11, 2014, invention name: display panel). technical field [0002] The present invention relates to a display panel, and in particular to a display panel with a thin film transistor substrate. Background technique [0003] In the manufacturing process of the display panel, if the conductive layers on the upper and lower sides of the insulating layer are to be conducted, a via or contact hole is designed so that the conductive layers on the upper and lower sides can be electrically connected. For example, the method of electrically connecting the pixel electrode and the drain of the thin film transistor in the pixel structure is to perform a patterning process before forming the pixel electrode to form a via hole in the insulating layer to expose the underlying drain, and then After the pixel electrode is plated, the pix...

AI Technical Summary

Problems solved by technology

[0004] However, with the development of high-resolution display panels, their structures and manufacturing processes are becoming more complex, and there may be more than one insulating layer between different conductive layers.

Due to the different film forming conditions of different insulating layers, it is easy to form chamfers when etching to form through holes

Such chamfering can easily lead to incomplete filling of the through hole, or disconnection when the conductive layer is plated, which affects the quality of the display panel

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