IGBT junction temperature thermal calculation method under fault current

Abstract

An IGBT junction temperature thermal calculation method under a fault current relates to a thermal calculation method, and aims to solve the technical problems that an existing method cannot effectively reflect the transient junction temperature of each chip in an IGBT module; the method comprises the following steps: 1, calculating power module loss according to circuit state information and a loss parameter, fitting a manual curve of the IGBT module so as to obtain a conduction voltage drop, an IGBT open loss and a shut down loss, and using an instantaneous power consumption integration in aperiod to represent the loss; 2, obtaining a power device peak junction temperature calculation method under a burst pulse power according to an IGBT peak junction temperature calculation method under a short power pulse, inputting IGBT module thermal property parameters, using the physical parameter of a related layer to simulate a thermal response curve in operation, and building a module system thermal circuit module; 3, determining the IGBT module temperature. The IGBT junction temperature thermal calculation method is reasonable in design, high in precision, and accurate in prediction results.

Description

technical field [0001] The invention relates to a thermal calculation method, in particular to a thermal calculation method based on IGBT junction temperature under fault current. Background technique [0002] According to the research report on the reliability of power electronic systems, power semiconductor devices are the core components of modern power electronic conversion devices, and they are also the components with the highest failure rate in the converter system, accounting for about 34%. Among various failure factors, about 55% of power electronic system failures are mainly induced by temperature factors. Therefore, in order to avoid severe performance degradation or even catastrophic damage of the power module, the maximum operating junction temperature and the junction temperature fluctuation of the power module should be closely monitored. Specifically, the thermal breakdown failure and thermal fatigue failure of the module are triggered by its highest operati...

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Problems solved by technology

At the same time, the thermal network model of IGBT realizes the calculation of IGBT junction temperature under short-circuit fault, but this method also has limitations, and it is not suitable for studying the relationship between transient disturbance current and temperature rise under short pulse power

[0006] In summary, the problem of the prior art is the lack of a method that can effectively reflect the transient junction temperature of each chip in the IGBT module

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