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Thin film transistor manufacturing method and array substrate

A technology of thin film transistor and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problem of easy leakage and other problems

Active Publication Date: 2018-10-23
SHENZHEN ROYOLE DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] In the manufacturing process of the array substrate, the electrical properties of the thin film transistor switch are directly related to the leakage of the source and drain. When making the oxide semiconductor layer, the redundant non-polysilicon part will be removed by etching, and then the source electrode and drain, but leakage is likely to occur between the source and drain and the oxide semiconductor layer, especially between the sides of the oxide semiconductor layer and the source and drain

Method used

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  • Thin film transistor manufacturing method and array substrate
  • Thin film transistor manufacturing method and array substrate
  • Thin film transistor manufacturing method and array substrate

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Embodiment Construction

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0028] see figure 1 , which is a schematic diagram of the side structure of the display panel in an embodiment of the present invention.

[0029] Such as figure 1 As shown, the display panel includes an array substrate 11 , a display medium layer 13 and a color filter substrate 15 which are stacked in sequence. Wherein, a plurality of display elements (not shown) are disposed on the array substrate 11 and the color filter substrate 15 , and the plurality of display elements are used to generate an electric field to drive the display medium layer 13 to display images. In this embodiment, the display medium layer 13 is a liquid crystal molecular layer, that is, the display panel 10 in this embodiment is described by taking a liquid crystal display panel (Liquid Crystal Display...

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Abstract

A thin film transistor manufacturing method comprises: removing natural oxide layers (132) on two opposite sides (131) of an oxide semiconductor layer (13) of a thin-film transistor; oxidizing the twosides whose the natural oxide layers are removed, so as to form oxide protective layers (134); and forming a source (141) and a drain (142) on the oxide semiconductor layer (13) on which the oxide protective layers (134) are formed. An array substrate (11) is also disclosed.

Description

technical field [0001] The present invention relates to the technical field of display panel manufacturing, in particular to a method for manufacturing an array substrate and a thin film transistor used in a display panel. Background technique [0002] In the manufacturing process of the array substrate, the electrical properties of the thin film transistor switch are directly related to the leakage of the source and drain. When making the oxide semiconductor layer, the redundant non-polysilicon part will be removed by etching, and then the source electrode and drain, but a leakage phenomenon easily occurs between the source and drain and the oxide semiconductor layer, especially between the side portions of the oxide semiconductor layer and the source and drain. Contents of the invention [0003] An embodiment of the present invention provides a thin film transistor manufacturing method that prevents leakage of source and drain. [0004] The present application provides ...

Claims

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Application Information

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IPC IPC(8): H01L21/336
CPCH01L29/66742H01L27/12H01L29/786
Inventor 何家伟叶江波刘方
Owner SHENZHEN ROYOLE DISPLAY TECH CO LTD