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A method for preparing thin films

A technology of thin film and preparation process, which is applied in the direction of metal material coating process, vacuum evaporation plating, coating, etc., and can solve the problem that the density of each layer of film cannot be quantitatively determined, and the density of each layer of film cannot be quantitatively determined. And other issues

Active Publication Date: 2020-07-14
CHNA ENERGY INVESTMENT CORP LTD +1
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  • Description
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  • Application Information

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Problems solved by technology

[0005] The embodiment of the present application provides a method for determining the corresponding relationship between the optical parameters of the film and the preparation process parameters, which is used to solve the problem in the prior art that the properties such as the density of each layer of the film cannot be quantitatively determined
[0006] The embodiment of the present application provides a method for preparing a thin film, which is used to solve the problem that the density and other properties of each layer of thin film cannot be quantitatively determined in the prior art

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  • A method for preparing thin films
  • A method for preparing thin films
  • A method for preparing thin films

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Embodiment Construction

[0027] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in conjunction with specific embodiments of the present application and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0028] The technical solutions provided by various embodiments of the present application will be described in detail below in conjunction with the accompanying drawings.

[0029] In order to solve the problem that the density and other properties of each layer of thin film cannot be quantitatively determined in the prior art, the embodiment of the pr...

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Abstract

The invention discloses a method for determining the corresponding relation between optical parameters of thin films and preparation process parameters, and further discloses a method for preparing the thin films. The problem that in the prior art, the properties such as density of all the layers of thin films cannot be determined quantitatively is solved. The method for determining the corresponding relation between the optical parameters of the thin films and the preparation process parameters comprises the steps that the thin films are prepared correspondingly under the multiple predetermined preparation process parameters; and the optical parameters of all the thin films prepared under the multiple predetermined preparation process parameters are determined to obtain the correspondingrelation between the optical parameters of the thin films and the preparation process parameters, so that the thin films meeting the preparation demands are prepared according to the corresponding relation.

Description

technical field [0001] The present application relates to the field of optoelectronic technology, in particular to a method for preparing a thin film, and a method for determining the corresponding relationship between the optical parameters of the thin film and the parameters of the preparation process. Background technique [0002] With the development of micromachining technology, thin films have been widely used in various fields, among which metal thin films have important applications in the fields of mechanics, electronics, magnetism and optics. The thin film preparation process can be widely used in the field of optoelectronic technology, such as copper indium gallium selenide (CuInGaSe 2 , CIGS) in the preparation of thin film solar cells. [0003] In the process of preparing thin films, thin films with different densities are often prepared according to different requirements. For example, the molybdenum back electrode layer of CIGS thin film solar cells often con...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/54C23C14/18C23C14/34
CPCC23C14/185C23C14/545C23C14/547
Inventor 宋斌斌郭凯于涛张传升左宁李新连赵树利
Owner CHNA ENERGY INVESTMENT CORP LTD