A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer

Abstract

A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesionlayer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.

Description

technical field [0001] Embodiments of the present disclosure relate to the manufacture of semiconductor integrated circuits, and in particular to methods for forming intermetallic dielectric layers with ultra-low dielectric constants. Background technique [0002] With the advancement of transistor manufacturing technology, the size of transistors has shrunk, and the number of transistors per unit area of ​​integrated circuits has also increased accordingly. Increased device densities require more advanced interconnect technologies that enable the transfer of signals between devices at desired speeds and meet the requirements for low resistance and low capacitance (e.g., low resistance-capacitance (RC) time constants) . As integrated circuits become more complex and feature sizes shrink, the impact of interconnect RC time constants on signal delays also intensifies. In the semiconductor back-end-of-line (BEOL) process, the metal interconnect structure is fabricated with an...

AI Technical Summary

Problems solved by technology

However, low-k dielectric materials have unfavorable characteristics and properties, such as high porosity, which make them susceptible to damage during certain semiconductor manufacturing processes, such as etching, deposition, and wet processes, which compromise their dielectric constant (and thus i.e., increase its dielectric constant)

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