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Silicon-controlled electrostatic protection device

A technology of electrostatic protection and thyristor, which is applied in the fields of electric solid devices, electrical components, semiconductor devices, etc., and can solve the problem of high trigger voltage

Active Publication Date: 2018-11-02
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above situation, it is necessary to provide a thyristor electrostatic protection device to solve the problem of excessive trigger voltage

Method used

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Embodiment Construction

[0018] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. Several embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0019] It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "left," "right," "upper," "lower," a...

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Abstract

The invention provides a silicon-controlled electrostatic protection device, which comprises a substrate, wherein a deep N well is arranged in the substrate; a P well and an N well are arranged in thedeep N well; a first N+ injection region, a second N+ injection region and a first P+ injection region are arranged in the P well; a third N+ injection region, a second P+ injection region and a third P+ injection region are arranged in the N well; the first N+ injection region, the third N+ injection region and the second P+ injection region are connected with an anode; the second N+ injection region, the first P+ injection region and the third P+ injection region are connected with a cathode; the second N+ injection region, the P well and the N well form an NPN structure; the P well, the Nwell and the third P+ injection region form a PNP structure to form a silicon-controlled structure; the first N+ injection region and the P well form a first reverse bias diode; and the third P+ injection region and the N well form a second reverse bias diode. According to the silicon-controlled electrostatic protection device, the problem of overhigh trigger voltage can be solved.

Description

technical field [0001] The invention relates to the technical field of electrostatic protection for integrated circuits, in particular to a thyristor electrostatic protection device. Background technique [0002] LDMOS (Laterally Diffused Metal Oxide Semiconductor, Laterally Diffused Metal Oxide Semiconductor) devices are widely used in power management chips, such as DC-DC converters, AC-DC converters, and the like. With the development of integrated circuits in the direction of high speed and high voltage, the weak electrostatic protection ability of LDMOS devices has become a bottleneck restricting its development. Therefore, how to improve the electrostatic protection capability (Electro-Static discharge, ESD) of the LDMOS device has become a research hotspot. [0003] The silicon controlled rectifier (Silicon Controlled Rectifier, SCR) utilizes the positive feedback function of the PNPN structure, has a strong electrostatic discharge capability, and has received extens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262H01L27/0296
Inventor 陈卓俊曾云彭伟金湘亮吴志强
Owner HUNAN UNIV