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SCR electrostatic protection device

An electrostatic protection, thyristor technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problem of high trigger voltage

Active Publication Date: 2021-04-13
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above situation, it is necessary to provide a thyristor electrostatic protection device to solve the problem of excessive trigger voltage

Method used

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  • SCR electrostatic protection device
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  • SCR electrostatic protection device

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Embodiment Construction

[0018] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. Several embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0019] It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "left," "right," "upper," "lower," a...

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Abstract

The invention provides a thyristor electrostatic protection device, which includes a substrate, a deep N well is arranged on the substrate, a P well and an N well are arranged in the deep N well, and a first well is arranged in the P well. N+ implantation region, second N+ implantation region and first P+ implantation region, the N well is provided with a third N+ implantation region, second P+ implantation region and third P+ implantation region; the first N+ implantation region, the The third N+ injection region, the second P+ injection region are connected to the anode, the second N+ injection region, the first P+ injection region, and the third P+ injection region are connected to the cathode; the second N+ The implanted area, the P well, and the N well form an NPN structure, and the P well, the N well, and the third P+ implanted area form a PNP structure, forming a thyristor structure; the first N+ implanted area The P well and the P well form a first reverse biased diode, and the third P+ injection region and the N well form a second reverse biased diode. The invention can solve the problem of too high trigger voltage.

Description

technical field [0001] The invention relates to the technical field of electrostatic protection for integrated circuits, in particular to a thyristor electrostatic protection device. Background technique [0002] LDMOS (Laterally Diffused Metal Oxide Semiconductor, Laterally Diffused Metal Oxide Semiconductor) devices are widely used in power management chips, such as DC-DC converters, AC-DC converters, and the like. With the development of integrated circuits in the direction of high speed and high voltage, the weak electrostatic protection ability of LDMOS devices has become a bottleneck restricting its development. Therefore, how to improve the electrostatic protection capability (Electro-Static discharge, ESD) of the LDMOS device has become a research hotspot. [0003] The silicon controlled rectifier (Silicon Controlled Rectifier, SCR) utilizes the positive feedback function of the PNPN structure, has a strong electrostatic discharge capability, and has received extens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262H01L27/0296
Inventor 陈卓俊曾云彭伟金湘亮吴志强
Owner HUNAN UNIV