Three-dimensional semiconductor devices

Abstract

A three-dimensional semiconductor device includes gate electrodes sequentially stacked on a substrate, a channel structure penetrating the gate electrodes and being connected to the substrate, an insulating gap-fill pattern provided within the channel structure and surrounded by the channel structure as viewed in a plan view, and a conductive pattern on the insulating gap-fill pattern. At least aportion of the insulating gap-fill pattern is received in the conductive pattern, and at least a portion of the conductive pattern is interposed between at least that portion of the insulating gap-fill pattern and the channel structure.

Description

technical field [0001] The inventive concept relates to a semiconductor device, and in particular, to a three-dimensional semiconductor device in which memory cells are three-dimensionally arranged. Background technique [0002] Higher integration of semiconductor devices is required to meet consumer demand for electronic products that provide superior performance at low prices. In the case of semiconductor devices, since their integration is an important factor in determining the price of a product, increased integration is particularly desired. In the case of general two-dimensional or planar semiconductor memory devices, since their integration is mainly determined by the area occupied by a unit memory cell, the integration is greatly influenced by the level of fine patterning technology. However, the very expensive process equipment required to increase the fineness of the pattern sets a practical limit to improving the integration of two-dimensional or planar semicondu...

AI Technical Summary

Problems solved by technology

However, there are significant fabrication hurdles in achieving low-cost, high-volume production of 3D semiconductor devices, especially in high-volume fabrication of 3D devices that maintain or exceed the operational reliability of their 2D counterparts.

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