Drain leakage current testing circuit and method in field effect transistor breakdown voltage characteristic

A field effect transistor and breakdown voltage technology, applied in the direction of testing dielectric strength, measuring electricity, measuring devices, etc., can solve the problems of high price, inability to guarantee measurement accuracy, non-compliance, etc., to save hardware costs and improve test accuracy. And the effect of high efficiency and high test accuracy

Pending Publication Date: 2018-11-06
BEIJING HUAFENG TEST & CONTROL TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] MOSFET type (the MOSFET corresponding to the first generation semiconductor material Si silicon, when measuring the leakage current, can be connected to the S terminal (source) of the device for measurement; but the discrete device corresponding to the third generation semiconductor material GaN, the current test requirements It is to measure the leakage current at the D terminal) The technical requirement for the device to measure the leakage is to test the current at the D terminal (drain). The simplest test method used is as follows: figure 1 , connect an ammeter between the voltage source and the DUT (drain), and obtain the current at the D terminal by reading the value of the ammeter. However, due to the high common-mode voltage and the nA level of the measured current, this measurement method requires Ammeters have very high accuracy, but there are not many ammeters that meet such environmental and accuracy requirements, and they are expensive
[0004] for figure 1 In the technical solution shown, since this type of device has the characteristics of high breakdown voltage, it needs to input a high voltage (for exa

Method used

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  • Drain leakage current testing circuit and method in field effect transistor breakdown voltage characteristic
  • Drain leakage current testing circuit and method in field effect transistor breakdown voltage characteristic
  • Drain leakage current testing circuit and method in field effect transistor breakdown voltage characteristic

Examples

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Example Embodiment

[0030] Example 1:

[0031] A drain leakage current test circuit in the breakdown voltage characteristic of a field effect tube, such as image 3 As shown, the drain leakage current test circuit includes a test voltage source 1 and a tested field effect transistor 2. The test voltage source is used to apply voltage to the drain D and source S of the tested field effect transistor. A current / voltage conversion and amplifying module 3 is arranged between the positive electrode of the voltage source 1 and the drain D of the field effect tube. The voltage output signal of the current / voltage conversion and amplifying module is transmitted to the signal input terminal of an isolation amplifier module 4. The current / Voltage conversion and amplification module is obtained by the operational amplifier to obtain the sampling resistance signal to form current / voltage conversion. The isolated output end of the isolation amplifier module is connected to a microprocessor unit 5, which isolates...

Example Embodiment

[0039] Example 2:

[0040] A drain leakage current test method in the breakdown voltage characteristic of a field effect tube is based on the test method of the drain leakage current test circuit of Embodiment 1. Therefore, the content of Embodiment 1 should be the content of this embodiment. Therefore, the test circuit includes a test voltage source and a field effect tube under test. The test voltage source is used to apply voltage to the drain D and source S of the field effect tube under test. A current / voltage conversion amplifying module is arranged between pole D, and the voltage output signal of the current / voltage conversion amplifying module is transmitted to the input end of an isolation amplifier module. The current / voltage conversion amplifying module is composed of an operational amplifier and a sampling resistor, The isolation output end of the isolation amplifier module is connected to a microprocessor unit, and the test voltage source output voltage of the rated ...

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Abstract

The invention discloses a drain leakage current testing circuit and method in a field effect transistor breakdown voltage characteristic. The circuit comprises a test voltage source and a tested fieldeffect transistor; a current/voltage conversion amplification module is arranged between a positive electrode of the test voltage source and a drain D of a field effect transistor; a voltage output signal of the current/voltage conversion amplification module is transmitted to a signal input end of an isolation amplifier module; the current/voltage conversion amplification module is composed of an operational amplifier and a sampling resistor; and an isolation output end of the isolation amplifier module is connected to a microprocessor unit. A current-voltage conversion circuit is used to replace a directly arranged ammeter on the drain side, a set of voltmeter test hardware is used to be connected to the current-voltage conversion circuit to realize the test of the leakage current; thedrain leakage current testing circuit is simple, is high in test precision, can achieve parallel test of N tested devices in a multi-station condition on the basis of one set of voltmeter test hardware, can improve the test precision and efficiency, and can save the hardware cost.

Description

technical field [0001] The invention belongs to the field of circuit testing of discrete devices, and in particular relates to a drain leakage current testing circuit and method in field effect tube breakdown voltage characteristics. Background technique [0002] In the field of integrated circuit testing, various types of MOSFETs or other discrete devices need to be tested for leakage between device pins. When the device under test has the characteristics of high breakdown voltage, it is necessary to input a high voltage to test the device. Perform measurements (such as: the first generation Si silicon-based MOSFET and the third generation semiconductor device GaN gallium nitride field effect transistor silicon, etc.). [0003] MOSFET type (the MOSFET corresponding to the first generation semiconductor material Si silicon, when measuring the leakage current, can be connected to the S terminal (source) of the device for measurement; but the discrete device corresponding to t...

Claims

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Application Information

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IPC IPC(8): G01R31/12G01R31/02
CPCG01R31/129G01R31/50
Inventor 王俊美宋利鹏郝瑞庭刘惠鹏
Owner BEIJING HUAFENG TEST & CONTROL TECH CO LTD
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