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Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve the problems of occupying chip space and increasing production costs, and achieve the effects of reducing switching noise, reducing switching noise, and improving space utilization

Active Publication Date: 2018-11-06
淮安西德工业设计有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, additional decoupling capacitors are added to existing circuits, which not only occupies chip space, but also increases production costs

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

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Embodiment Construction

[0022] In existing chip applications, when the output signal of a digital circuit undergoes level conversion, it is easy to generate a large inrush current, also known as switching noise.

[0023] refer to figure 1 , figure 1 It is a structural schematic diagram of a semiconductor device in the prior art.

[0024] The semiconductor device may include a device wafer 100 , a pixel wafer 120 and a dielectric layer 130 .

[0025] Wherein, the dielectric layer 130 may be located between the pixel wafer 120 and the front surface of the device wafer 100 for bonding the pixel wafer 120 and the device wafer 100 .

[0026] Specifically, the device wafer 100 may include a semiconductor substrate 101 , and the metal interconnection structure 102 is located on a front surface of the semiconductor substrate 101 .

[0027] The semiconductor device may further include a plurality of pads 104 electrically connected to the metal interconnect structure 102 .

[0028] In a specific implementa...

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PUM

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Abstract

The invention discloses a semiconductor device and a forming method thereof. The semiconductor device comprises a device wafer, a plurality of gaskets, a pixel wafer and a plurality of conductive plugs, wherein a metal interconnection structure is arranged at the front side of the device wafer; the plurality of gaskets are electrically connected with the metal interconnection structure; the surface of the pixel wafer is bonded to the front side of the device wafer; the plurality of conductive plugs pass through the pixel wafer; one part of the plurality of conductive plugs are connected with the gaskets; and the other part of the conductive plugs are separated from the gaskets through a dielectric. According to the semiconductor device, the conductive plugs and the gaskets can be reused astwo layers of metal in an MIM capacitor structure while the switching noise is reduced, thereby facilitating improvement of the space utilization rate and reduction of the production cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] In existing chip applications, when the output signal of a digital circuit undergoes level conversion, it is easy to generate a large inrush current, also known as switching noise. [0003] In an existing solution, in order to reduce switching noise, a decoupling capacitor is provided to store the current when the surge current is too large, thereby reducing the influence of switching noise on the device. [0004] However, adding additional decoupling capacitors to existing circuits not only occupies chip space, but also increases production costs. Contents of the invention [0005] The technical problem solved by the present invention is to provide a semiconductor device and its forming method, which can reduce switching noise while reusing conductive plugs and pads as two l...

Claims

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Application Information

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IPC IPC(8): H01L23/538H01L23/64H01L21/768
CPCH01L21/76897H01L23/5386H01L23/642
Inventor 张东亮金子貴昭黄晓橹
Owner 淮安西德工业设计有限公司