A two-dimensional spintronic device controlled by an electric field and its preparation method

A spintronic device and electric field regulation technology, applied in the parts of electromagnetic equipment, the manufacture/processing of electromagnetic devices, the selection of materials, etc., to achieve the effect of strong controllability

Active Publication Date: 2020-02-21
XIAMEN UNIV
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Problems solved by technology

[0003] In view of the design requirements of spintronic devices and the regulation of polarizability, the present invention proposes a two-dimensional spintronic device based on the electric field regulation of two-dimensional materials of III-VI chalcogenides doped with ferromagnetic metals and its The preparation method, the device adopts the electrical control method, which can solve the problem of generating spin current under the condition of strong magnetic field or low temperature

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  • A two-dimensional spintronic device controlled by an electric field and its preparation method
  • A two-dimensional spintronic device controlled by an electric field and its preparation method
  • A two-dimensional spintronic device controlled by an electric field and its preparation method

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[0032] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments, but the scope of protection of the present invention is not limited to the following embodiments.

[0033] refer to figure 1 , the device structure of the present invention comprises a sandwich structure of the first BN two-dimensional material / ferromagnetic metal-doped III-VI group chalcogenide two-dimensional material / second BN two-dimensional material, and the first BN two-dimensional material and the first BN two-dimensional material respectively. The first transparent electrode and the second transparent electrode connected with the second BN two-dimensional material, and the channel electrode connected with the III-VI group chalcogenide two-dimensional material doped with ferromagnetic metal. Taking Fe-doped monomolecular layer GaSe two-dimensional material, first graphene transparent electrode and second graphene transparent electrode, and Cr / Au ...

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Abstract

A two-dimensional spintronic device regulated by an electric field and a preparation method thereof relate to generation of spin current and electric field regulation of polarizability. The device structure includes a sandwich structure of the first BN two-dimensional material / ferromagnetic metal-doped III-VI chalcogenide two-dimensional material / second BN two-dimensional material, and the first BN two-dimensional material and the second BN two-dimensional Material-connected transparent electrodes, and channel electrodes connected to III‑VI chalcogenide two-dimensional materials. The ferromagnetic metal is doped in the lattice substitution or interstitial position of the III-VI group chalcogenide two-dimensional material, which makes the electrons of the III-VI group chalcogenide two-dimensional material spin-polarized; the spin-polarized electron Under the excitation of incident laser, the spin current is generated through the channel circuit, and the magnetic structure of the III-VI group chalcogenide two-dimensional material doped with ferromagnetic metal is adjusted between ferromagnetic coupling and antiferromagnetic coupling by applying a vertical electric field. , so that the polarizability of the spin current can be regulated in the range of 0-100%, forming a two-dimensional spintronic device with electrically controllable polarizability.

Description

technical field [0001] The invention relates to a spintronic device and a preparation method thereof, in particular to a spintronic device and a preparation method thereof of two-dimensional materials of ferromagnetic metal-doped III-VI chalcogenides regulated by an electric field. Background technique [0002] Spintronics explores the possibility of developing a new generation of electronic products based on the spin of electrons instead of the traditional electron charge. Spintronic devices have the advantages of non-volatility, fast data processing speed, high integration density and low power consumption, etc., and become a development trend of electronic devices. The methods for generating spin current mainly include the electrical injection method based on the spin Hall effect, the lateral nonlocal geometric injection method using ferromagnetic electrodes, and the light injection method using polarized light irradiation: (1) Based on the spin Hall effect Effect of ele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/02H01L43/10H01L43/12
CPCH10N50/80H10N50/01H10N50/85
Inventor 吴雅苹柯聪明周江鹏康俊勇吴志明张纯淼
Owner XIAMEN UNIV
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