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A high-performance zinc oxide varistor dielectric material and its preparation method

A varistor, dielectric material technology, applied in varistors, overvoltage protection resistors, etc., can solve the problems of small nonlinear coefficient and weak pulse shock resistance, and achieve high potential gradient, pulse shock resistance, etc. The effect of strong acceptability and simple preparation process

Active Publication Date: 2021-06-01
东莞市瓷谷电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above two zinc oxide varistor dielectric materials have high potential gradients, their nonlinear coefficients are small, or their pulse shock tolerance is weak, and it is difficult to meet the needs of lightning protection and overvoltage protection of power electronic circuits.

Method used

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  • A high-performance zinc oxide varistor dielectric material and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027]First, synthesize Licrsi with solid phase method2O6(LA2 / 3ND1 / 3ALO3.

[0028]Licrsi2O6Using the following process preparation: Press 0.5: 0.5: 2 Molarby with Li2CO3, Cr2O3SiO2, Then pair Li2CO3, Cr2O3SiO2Grinding and mixing uniform; then li2CO3, Cr2O3SiO2The mixture was placed in an alumina crucible, and 120 minutes at 1180 ° C for 120 minutes to obtain Licrsi.2O6. Get Licrsi2O6After cooling, it is grinded and over 200 mesh sieves, spare.

[0029](La2 / 3ND1 / 3ALO3Preparation as follows: Press 1 / 3: 1 / 6: 1 / 2 of the molar ratio LA2O3ND2O3Alone2O3, Then pair LA2O3ND2O3Alone2O3Carry-up and mix evenly; then LA2O3ND2O3Alone2O3The mixture is placed in an alumina crucible, which is charged 120 minutes at 1220 ° C, resulting in (LA2 / 3ND1 / 3ALO3. Law2 / 3ND1 / 3ALO3After cooling, it is grinded and over 200 mesh sieves, spare.

[0030]Then, high-performance zinc oxide pressure sensitive resistor dielectric materials are prepared as follows:

[0031](1) Equipped with ZnO, SB2O3, CO2O3, BI2O3Ni2O3, Cr2O3, LICR...

Embodiment 2

[0044]First, synthesize Licrsi with solid phase method2O6(LA2 / 3ND1 / 3ALO3.

[0045]Licrsi2O6Using the following process preparation: Press 0.5: 0.5: 2 Molarby with Li2CO3, Cr2O3SiO2, Then pair Li2CO3, Cr2O3SiO2Grinding and mixing uniform; then li2CO3, Cr2O3SiO2The mixture is placed in an alumina crucible, and 120 minutes at 1150 ° C for 120 minutes to obtain Licrsi.2O6. Get Licrsi2O6After cooling, it is grinded and over 200 mesh sieves, spare.

[0046](La2 / 3ND1 / 3ALO3Preparation as follows: Press 1 / 3: 1 / 6: 1 / 2 of the molar ratio LA2O3ND2O3Alone2O3, Then pair LA2O3ND2O3Alone2O3Carry-up and mix evenly; then LA2O3ND2O3Alone2O3The mixture is placed in an alumina crucible, which is charged 120 minutes at 1200 ° C, resulting in (LA2 / 3ND1 / 3ALO3. Law2 / 3ND1 / 3ALO3After cooling, it is grinded and over 200 mesh sieves, spare.

[0047]Then, high-performance zinc oxide pressure sensitive resistor dielectric materials are prepared as follows:

[0048](1) Equipped with ZnO, SB2O3, CO2O3, BI2O3Ni2O3, Cr2O3, LICRS...

Embodiment 3

[0061]First, synthesize Licrsi with solid phase method2O6(LA2 / 3ND1 / 3ALO3.

[0062]Licrsi2O6Using the following process preparation: Press 0.5: 0.5: 2 Molarby with Li2CO3, Cr2O3SiO2, Then pair Li2CO3, Cr2O3SiO2Grinding and mixing uniform; then li2CO3, Cr2O3SiO2The mixture was placed in an alumina crucible, and 120 minutes were held at 1200 ° C to obtain Licrsi.2O6. Get Licrsi2O6After cooling, it is grinded and over 200 mesh sieves, spare.

[0063](La2 / 3ND1 / 3ALO3Preparation as follows: Press 1 / 3: 1 / 6: 1 / 2 of the molar ratio LA2O3ND2O3Alone2O3, Then pair LA2O3ND2O3Alone2O3Carry-up and mix evenly; then LA2O3ND2O3Alone2O3The mixture is placed in an alumina crucible, which is charged 120 minutes at 1250 ° C, resulting in (LA2 / 3ND1 / 3ALO3. Law2 / 3ND1 / 3ALO3After cooling, it is grinded and over 200 mesh sieves, spare.

[0064]Then, high-performance zinc oxide pressure sensitive resistor dielectric materials are prepared as follows:

[0065](1) Equipped with ZnO, SB2O3, CO2O3, BI2O3Ni2O3, Cr2O3, LICRSI2O6,...

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Abstract

A high-performance zinc oxide varistor dielectric material is characterized in that it consists of: 100 parts of ZnO, Sb 2 o 3 0.03‑1.5 parts, Co 2 o 3 0.03‑1.5 parts, Bi 2 o 3 0.03‑1.5 parts, Ni 2 o 3 0.03‑1.5 parts, Cr 2 o 3 0.03‑1.5 parts, LiCrSi 2 o 6 0.03‑1.5 parts, Al 2 o 3 0.03‑0.8 parts, zinc borate 0.03‑0.8 parts, LiNO 3 0.03‑0.8 parts, (La 2 / 3 Nd 1 / 3 )AlO 3 0.03‑0.8 parts. The invention also provides a preparation method of the above-mentioned high-performance zinc oxide varistor dielectric material. The dielectric material of the zinc oxide piezoresistor of the invention has high potential gradient, high nonlinear coefficient, strong pulse shock tolerance, and simple and easy preparation process.

Description

Technical field[0001]The present invention relates to a dielectric material of a pressure-sensor, and is specifically involved in a high performance zinc oxide pressure sensor dielectric material and a preparation method thereof.Background technique[0002]The zinc oxide varistor material can be used to make high energy zinc oxide pressure resistive resistors, which can be used to fabricate arresters or varistors, applied to absorb abnormal overvoltage in power electronics, to protect lines system. In the power electronics, the line abnormal overvoltage is often caused by lightning strike load, and the zinc oxide pressure-sensitive resistance medium material has been used in large quantities for absorption or inhibiting abnormal overvoltage in power electronics, and protects the power electronics from damage.[0003]However, the zinc oxide pressure-sensitive resistive medium material has been applied, and its potential gradient (unit thickness pressure sensitive voltage) is typically le...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622C04B35/626H01C7/12
CPCC04B35/453C04B35/622C04B35/62675C04B2235/3203C04B2235/3217C04B2235/3222C04B2235/3224C04B2235/3227C04B2235/3241C04B2235/3275C04B2235/3279C04B2235/3294C04B2235/3298C04B2235/3409C04B2235/3427C04B2235/656H01C7/12
Inventor 李言
Owner 东莞市瓷谷电子科技有限公司