Scanning electron microscope system and sample detection method

A technology for electron microscopes and samples, applied in circuits, discharge tubes, electrical components, etc., to solve problems such as decreased resolution and increased focused beam spot

Pending Publication Date: 2018-11-13
FOCUS E BEAM TECH BEIJING CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the electron beam is incident on the sample in a low-energy state (<5keV), various chromatic a

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Scanning electron microscope system and sample detection method
  • Scanning electron microscope system and sample detection method
  • Scanning electron microscope system and sample detection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] An optional schematic diagram of a scanning electron microscope system provided in Embodiment 1 of the present invention, such as Figure 4 As shown, it includes: an electromagnetic cross-field analyzer 105 , a composite objective lens 11 composed of an electric lens 10 and a magnetic lens 107 , a rear deflection device 108 and a sample stage 109 .

[0047] In some embodiments, the function of the electromagnetic cross-field analyzer 105 can be implemented by a Wien analyzer. The electromagnetic cross-field analyzer 105 is located between the upper pole piece of the magnetic lens 107 and the electron source 101 that generates the initial electron beam incident to the scanning electron microscope, and the central area of ​​the electromagnetic cross-field analyzer 105 coincident with the optical axis.

[0048] Here, the initial electron beam incident to the scanning electron microscope system is generated and emitted by the electron source 101, and the electrons emitted ...

Embodiment 2

[0062] The scanning electron microscope system provided by the second embodiment of the present invention is similar to the scanning electron microscope system provided by the first embodiment of the present invention, the difference is that the composition structure of the scanning electron microscope system provided by the second embodiment of the present invention is as follows Figure 9 As shown, a high-voltage tube 202 is also included; the high-voltage tube 202 is located between the upper pole piece of the magnetic lens 107 and the electron source that generates the initial electron beam incident to the scanning electron microscope system, and the center of the high-voltage tube 202 axis coincides with the optical axis. A higher voltage is loaded on the high-voltage tube 202, and the initial electron beam sent by the electron source 101 will maintain higher energy through the high-voltage tube 202, thereby reducing the influence of the space charge effect; the electric l...

Embodiment 3

[0064] Based on the scanning electron microscope system described in Embodiment 1 and Embodiment 2 above, Embodiment 3 of the present invention also provides a sample detection method. An optional processing flow of the sample detection method is as follows: Figure 10 shown, including the following steps:

[0065] In step S101, the initial electron beam emitted by the electron source is focused and incident on the surface of the sample to be tested under the action of the composite objective lens.

[0066] In the embodiment of the present invention, before the initial electron beam is incident on the composite objective lens of the scanning electron microscope, the electromagnetic cross-field analyzer and the deflection device behind the mirror are turned off first, and turning off the electromagnetic cross-field analyzer means that no voltage is applied to the electromagnetic cross-field analyzer and current, turning off the deflection device behind the mirror means not load...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a scanning electron microscope system. The scanning electron microscope system comprises an electromagnetic cross field analyzer, a compound objective lens composed of an electric lens and a magnetic lens, a mirror rear deflection device and a sample table, wherein the electromagnetic cross field analyzer is located between an upper pole shoe of the magnetic lens and an electron source which generates an initial electron beam that is incident to the scanning electron microscope system, and is used for enabling the incident initial electron beam with the first energy tomove along the optical axis, and enabling the initial electron beam with the second energy to be deflected to the two sides of the optical axis of the initial electron beam; the compound objective lens is used for converging the initial electron beam acted by the electromagnetic cross field analyzer so as to form a converged electron beam; and the mirror rear deflection device is positioned in a lower pole shoe hole of the magnetic lens and is used for changing the movement direction of the converged electron beam, so that the converged electron beam is obliquely incident to a to-be-tested sample on the sample table. The invention further discloses a sample detection method.

Description

technical field [0001] The invention relates to scanning electron microscope technology, in particular to a scanning electron microscope system and a sample detection method. Background technique [0002] Research progress in related fields such as materials, biology, and medicine relies heavily on efficient imaging solutions to characterize their properties, and the ability to image structural details in three dimensions is the key. [0003] The traditional scanning electron microscope uses a mechanical sample stage to realize the sample tilting. By tilting the sample stage, images of the same position of the sample can be obtained at different angles, and the sample morphology and the region of interest can be analyzed through the images observed at different angles, or use The image algorithm reconstructs the sample surface images detected from different angles to obtain a three-dimensional image of the sample. However, when the sample is tilted through the mechanical sa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01J37/05H01J37/145H01J37/147H01J37/28
CPCH01J37/05H01J37/145H01J37/1478H01J37/28H01J2237/2801
Inventor 李帅何伟王瑞平
Owner FOCUS E BEAM TECH BEIJING CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap