Backside illumination image sensor and manufacturing method therefor
A technology of image sensor and manufacturing method, which is applied in the direction of electric solid-state devices, semiconductor devices, radiation control devices, etc., can solve the problems of reducing light reflection, etc., and achieve the effects of reducing light reflection, high image quality, and reducing image quality degradation
Active Publication Date: 2018-11-16
淮安西德工业设计有限公司
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Problems solved by technology
[0008] However, although the above-mentioned back-illuminated image sensor can effectively reduce light reflection to a certain extent, it still has a certain room for performance improvement.
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Embodiment 2
[0076] Reference attached Figure 9 and attached Figure 10 , this embodiment provides two back-illuminated image sensor structures, including:
[0077] forming a semiconductor substrate 22 with more than one photodiode 21R, 21G, said semiconductor substrate comprising different pixel regions 20R, 20G, said photodiodes corresponding to different pixel regions 20R, 20G;
[0078] an insulating film 23 located on the semiconductor substrate 22;
[0079] a first light-shielding layer 27 partially covering the insulating film 23 and isolating the different pixel regions;
[0080] an adhesive film 24 covering the first light-shielding layer 27 and the insulating film 23;
[0081] The color filter layers 25R, 25G, and 25B that partially cover the adhesive film 24 and correspond to the positions of the photodiodes, the first light-shielding layer 27 and the adhesive film 24 pass between the color filter layers 25R, 25G, and 25B Formed composite structure isolation;
[0082] A lig...
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The technical scheme of the invention discloses a backside illumination image sensor and a manufacturing method therefor. The image sensor includes a semiconductor substrate provided with one or morephotodiodes, wherein the semiconductor substrate includes different pixel regions, and the photodiodes are corresponding to different pixel regions; an insulating film on the semiconductor substrate;a first light shielding layer which partially covers the insulating film and isolates the different pixel regions; an adhesive film covering the first light shielding layer and the insulating film; color filter layers which partially cover the adhesive film and are corresponding to the positions of all photodiodes, wherein all color filter layers are separated by a composite structure formed by the first light shielding layer and the adhesive film; a light absorbing layer located on the composite structure; microlenses on all the color filter layers, wherein the light absorbing layer completely isolates the microlenses. The image sensor can more effectively prevent external reflected light from entering the photodiodes, thereby improving the performance of the image sensor.
Description
technical field [0001] The invention relates to the manufacturing field of semiconductor devices, in particular to a back-illuminated image sensor and a manufacturing method thereof. Background technique [0002] An image sensor is a device that converts an optical image into an electrical signal. With the development of the computer and communication industries, the demand for high-performance image sensors is increasing. These high-performance image sensors are widely used in digital cameras, video recorders, personal communication systems (PCS), game consoles, security cameras, and medical miniature cameras. various fields. [0003] Image sensors are generally of two types, Charge Coupled Device (CCD) sensors and CMOS Image Sensors (CMOS Image Sensors, CIS). Compared with CCD image sensors, CMOS image sensors have the advantages of high integration, low power consumption, and low production cost. [0004] In the traditional CMOS photosensitive element, the photosensiti...
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IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14627H01L27/1464H01L27/14643H01L27/14683
Inventor 佟璐陈世杰黄晓橹
Owner 淮安西德工业设计有限公司