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Thin film consisting of micron-sized pentagonal stannous oxide and preparation method thereof

A stannous oxide, pentagon technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, to achieve the effect of simple raw materials, simple operation and simple equipment

Active Publication Date: 2018-11-20
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the research on the preparation method of SnO has been in-depth, but there are few reports on the preparation of SnO thin films by vapor deposition method using commercial SnO as raw material.

Method used

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  • Thin film consisting of micron-sized pentagonal stannous oxide and preparation method thereof
  • Thin film consisting of micron-sized pentagonal stannous oxide and preparation method thereof
  • Thin film consisting of micron-sized pentagonal stannous oxide and preparation method thereof

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Embodiment 1

[0021] A method for preparing a thin film material composed of micron-sized pentagonal stannous oxide, the method is specifically as follows: 0.1g of commercial stannous oxide is placed in a corundum boat, and then the polished surface of the cleaned silicon wafer is placed in a distance The commercial stannous oxide is 0.5cm in the vertical direction and 1cm obliquely above the horizontal direction, and it is placed in the CVD tube furnace so that the commercial stannous oxide is in the upstream position of the gas flow direction, and the silicon wafer is in the downstream position. Use a mechanical pump to evacuate to 10 -2 Pa, flow argon gas at a flow rate of 50sccm, then raise the temperature of the instrument to 780°C at a rate of 19.5°C / min, react at a constant temperature for 30min, and then naturally cool to room temperature to prepare a micron-sized pentagonal stannous oxide thin film material.

Embodiment 2

[0023] A method for preparing a thin film material composed of micron-sized pentagonal stannous oxide, the method is specifically as follows: 0.1g of commercial stannous oxide is placed in a corundum boat, and then the polished surface of the cleaned silicon wafer is placed in a distance The commercial stannous oxide is 0.5cm in the vertical direction and 2cm in the horizontal direction obliquely above, and it is placed in the CVD tube furnace so that the commercial stannous oxide is in the upstream position of the gas flow. Use a mechanical pump to evacuate to 10 -2 Pa, flow argon gas at a flow rate of 50 sccm, then raise the temperature of the instrument to 800°C at a rate of 19.5°C / min, react at a constant temperature for 30 minutes, and then naturally cool to room temperature to prepare a thin film material composed of micron-sized pentagonal stannous oxide.

[0024] image 3 It is the AFM image of the stannous oxide thin film. It can be seen from the figure that the thin...

Embodiment 3

[0027] A method for preparing a thin film material composed of micron-sized pentagonal stannous oxide, the method is specifically as follows: 0.1g of commercial stannous oxide is placed in a corundum boat, and then the polished surface of the cleaned silicon wafer is placed in a distance The commercial stannous oxide is 0.5cm in the vertical direction and 2cm in the horizontal direction obliquely above, and it is placed in the CVD tube furnace so that the commercial stannous oxide is in the upstream position of the gas flow. Use a mechanical pump to evacuate to 10 -2 Pa, flow argon gas at a flow rate of 50 sccm, then raise the temperature of the instrument to 820°C at a rate of 19.5°C / min, react at a constant temperature for 30 minutes, and then naturally cool to room temperature to prepare a thin film material composed of micron-sized pentagonal stannous oxide.

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Abstract

The invention discloses a preparation method of a thin film consisting of micron-sized pentagonal stannous oxide. The preparation method adopts commercial stannous oxide as a precursor and a silicon wafer as a substrate, and uses a vapor deposition process to successfully obtain the thin film consisting of the micron-sized pentagonal stannous oxide. With respect to preparation of the stannous oxide film, raw materials required by the preparation method are simple and easy to acquire, the cost is relatively low and no waste is generated. A preparation process is simple to implement, and free from limitation from environmental factors. Owing to special optical and electrical properties of stannous oxide, the stannous oxide is widely applied in the photoelectric field, and thus is widely applied to the fields of catalysts, reducing agents, thin film transistors, lithium battery electrodes, super-capacity memories and the like. A research clue of stannous oxide film preparation is innovated, and the foundation for research on the optical and electrical properties of the stannous oxide film is laid.

Description

technical field [0001] The invention belongs to the technical field of thin film material preparation, and in particular relates to a thin film composed of micron-sized pentagonal stannous oxide and a preparation method thereof. The method is simple in operation and low in cost. Background technique [0002] SnO belongs to two-dimensional oxide semiconductors, and also belongs to SnX (SnX; X=O, S, Se or Te) compounds. In this material family, Sn 5s electrons do not participate in the bonding process and form lone pairs of electrons. In SnO, these lone electron pairs point towards the interlayer spacing, and the resulting dipole-dipole interactions lead to a van der Waals gap between SnO layers of This lone pair activity is less in other such compounds, making SnO unique among SnX compounds. Therefore, SnO forms a layered structure with the Sn-O-Sn sequence in the [001] crystal orientation, and SnO has been used in electronic and optoelectronic devices due to its large opti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40
CPCC23C16/407
Inventor 陈贵锋刘春峰陈磊陶俊光陈士强程向荣于宸崎王雪
Owner HEBEI UNIV OF TECH