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Ultrasonic auxiliary silicon carbide wafer grinding and polishing device

An ultrasonic-assisted silicon carbide technology, applied in the field of processing equipment, ultrasonic-assisted grinding and polishing of silicon carbide wafers, can solve the problems of large surface damage and low material removal rate of silicon carbide wafer grinding and polishing, and improve processing efficiency and quality , economic precision is not high, the effect of improving efficiency

Inactive Publication Date: 2018-11-27
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the problems of large surface damage and low material removal rate in the grinding and polishing of silicon carbide wafers in the prior art, and to provide a device for ultrasonically assisted grinding and polishing of silicon carbide wafers

Method used

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  • Ultrasonic auxiliary silicon carbide wafer grinding and polishing device
  • Ultrasonic auxiliary silicon carbide wafer grinding and polishing device
  • Ultrasonic auxiliary silicon carbide wafer grinding and polishing device

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Embodiment Construction

[0045] The present invention is described in detail below in conjunction with accompanying drawing:

[0046] Referring to Fig. 1, the power part of described conventional grinding and polishing device comprises counterweight A-1, No. 1 retaining ring A-3, No. 1 grinding disc or polishing pad A-4; No. 1 test piece A-2 is placed on Between counterweight A-1 and No. 1 grinding disc or polishing pad A-4, counterweight A-1, No. 1 specimen A-2 and No. 1 grinding disc or polishing pad A-4 are stacked from top to bottom Placed and connected with each other, the counterweight A-1 provides the polishing pressure for the No. 1 specimen A-2, and the friction of the No. 1 specimen A-2 on the No. 1 grinding disc or polishing pad A-4 Rotate down (rotating speed is ω), the clearance fit between No. 1 retaining ring A-3 and counterweight A-1 is limited to limit the horizontal movement of No. 1 specimen A-2 (rotating speed is v s ) without impeding rotation.

[0047] A kind of ultrasonic assi...

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Abstract

The invention discloses an ultrasonic auxiliary silicon carbide wafer grinding and polishing device, and aims to solve the problems of severe damage to silicon carbide wafer grinding and polishing surface and low removing rate of materials. The device comprises a machine tool, a multi-degree-of-freedom positioning platform, a load adjusting component, an ultrasonic power component, a clamp component, a keeping ring, a grinding disk or polishing pad and an ultrasonic digital power supply, the multi-degree-of-freedom positioning platform comprises a movable platform and a seat, the load adjusting component comprises a frame and a bearing block, the ultrasonic power component comprises an energy converter and a self-aligning ball bearing, the multi-degree-of-freedom positioning platform is mounted on the machine tool through the frame, the load adjusting component is mounted on the movable platform through the frame, the ultrasonic power component is mounted on the bearing block, the topend of a clamp of the clamp component is fixedly connected with the bottom end of the energy converter, the bottom end of the clamp is mounted in the keeping ring and is rotatably connected with the keeping ring, the keeping ring is placed on the grinding disk or polishing pad, the grinding disk or polishing pad is mounted on the machine tool, and the ultrasonic power component is connected with the ultrasonic digital power supply through a signal line.

Description

technical field [0001] The invention relates to a processing device belonging to the field of precision and ultra-precision processing, more precisely, the invention relates to a device for ultrasonically assisted grinding and polishing of silicon carbide wafers. Background technique [0002] As a third-generation semiconductor substrate material, silicon carbide (SiC) has properties such as wide bandgap and high breakdown field strength, high thermal conductivity and operating temperature, low switching loss and high saturation drift speed, and radiation resistance. These excellent properties It is determined that it is an ideal substrate material for making high-brightness light-emitting diodes (HB-LEDs), and it is also an ideal substrate material for making high-temperature, high-frequency, high-power and radiation-resistant electronic devices. It is the frontier and commanding height of the current global semiconductor industry . Silicon carbide wafer is used as the sub...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/04
CPCB24B1/04
Inventor 呼咏石栋吴彤王文阳宋明凯田济语
Owner JILIN UNIV
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