Amorphous thin film device as well as preparation method and application thereof

Abstract

The invention belongs to the technical field of thin film devices and in particular relates to an amorphous thin film device as well as a preparation method and application thereof. The amorphous thinfilm device provided by the invention comprises a substrate, a first electrode structure, an amorphous thin film layer and a second electrode structure, wherein the first electrode structure is arranged on the substrate; the amorphous thin film layer is arranged at one side, opposite to the substrate, of the first electrode structure; the second electrode structure is arranged at one side, opposite to the first electrode structure, of the amorphous thin film layer; the first electrode structure and the second electrode structure are in mutual contact and connection; the amorphous thin film layer is an SrFexTi1-xO3 amorphous thin film layer, wherein x is 0.05 to 0.5. The amorphous thin film device provided by the invention adopts the SrFexTi1-xO3 amorphous thin film layer; the device has obvious conductivity of a rectifying diode and the rectifying property is remarkable; the on-off ratio of the device is greater than 10<3>; when a current and voltage circulating test is carried out for 40 times, the on-off ratio nearly has no great changes and the device has a nonvolatile storage property; the current of the device only has small fluctuation along time so that the device has goodstability and fatigue resistance.

Description

technical field [0001] The invention belongs to the technical field of thin film devices, in particular to an amorphous thin film device and its preparation method and application. Background technique [0002] At present, the non-volatile memory on the market is mainly flash memory (Flash). However, with the rapid development of technology, various new electronic products emerge in an endless stream, and electronic products have more stringent requirements and higher requirements on the performance of memory. Multi-optimized performance requirements, such as fast read and write speed, high storage density, low power consumption, long life, thinner thickness and smaller size, etc. However, when the size of the current Flash storage device is below 65nm, the traditional polysilicon floating gate structure has problems such as the contradiction between erasing and writing speed and reliability, and the leakage of the gate dielectric limits the further optimization of the stora...

AI Technical Summary

Problems solved by technology

However, when the size of the current Flash storage device is below 65nm, the traditional polysilicon floating gate structure has problems such as the contradiction between erasing and writing speed and reliability, and the leakage of the gate dielectric limits the further optimization of the storage device.

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