A kind of amorphous thin film device and its preparation method and application

Abstract

The invention belongs to the technical field of thin film devices, in particular to an amorphous thin film device and its preparation method and application. The amorphous thin film device of the present invention comprises: a substrate, a first electrode structure, an amorphous thin film layer and a second electrode structure; the first electrode structure is arranged on the substrate; the amorphous thin film layer is arranged on the side of the first electrode structure away from the substrate; The second electrode structure is arranged on the side of the amorphous film layer away from the first electrode structure, and the first electrode structure and the second electrode structure are connected to each other; the amorphous film layer is SrFe x Ti 1‑x o 3 The amorphous thin film layer, wherein, x is 0.05-0.5. The amorphous thin film device of the present invention adopts SrFe x Ti 1‑x o 3 Amorphous thin film layer, the device has obvious conductivity of a rectifier diode, and the rectification characteristic is remarkable; the switch ratio of the device is greater than 10 3 , When the current and voltage cycle test reaches 40 times, the switching ratio hardly changes, and it has non-volatile storage; the current of the device has only slight fluctuations with time, and it has good stability and fatigue resistance.

Description

technical field [0001] The invention belongs to the technical field of thin film devices, in particular to an amorphous thin film device and its preparation method and application. Background technique [0002] At present, the non-volatile memory on the market is mainly flash memory (Flash). However, with the rapid development of technology, various new electronic products emerge in an endless stream, and electronic products have more stringent requirements and higher requirements on the performance of memory. Multi-optimized performance requirements, such as fast read and write speed, high storage density, low power consumption, long life, thinner thickness and smaller size, etc. However, when the size of the current Flash storage device is below 65nm, the traditional polysilicon floating gate structure has problems such as the contradiction between erasing and writing speed and reliability, and the leakage of the gate dielectric limits the further optimization of the stora...

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Problems solved by technology

However, when the size of the current Flash storage device is below 65nm, the traditional polysilicon floating gate structure has problems such as the contradiction between erasing and writing speed and reliability, and the leakage of the gate dielectric limits the further optimization of the storage device.

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