Transition metal oxide p-n hetero-junction and preparation method thereof

A transition metal and heterojunction technology, applied in metal material coating process, semiconductor/solid-state device manufacturing, ion implantation plating, etc.

Inactive Publication Date: 2010-06-02
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Bismuth strontium cobalt oxide (Bi 2 Sr 2 co 2 o 8 ) synthesis of bulk materials, but the epitaxial growth of thin film materials has not been reported

Method used

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  • Transition metal oxide p-n hetero-junction and preparation method thereof
  • Transition metal oxide p-n hetero-junction and preparation method thereof
  • Transition metal oxide p-n hetero-junction and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 1: Bi 2 Sr 2 co 2 o 8 (100nm) / Sr 0.093 Nb 0.007 TiO 3 Fabrication of p-n heterojunctions.

[0029] 1. Bi-rich bismuth strontium cobalt oxide (Bi 21 Sr 2 co 2 o 8 ) Sintering of ceramic targets;

[0030] a. Bi with a purity of 99.95% 2 o 3 , SrCO 3 and Co 3 o 4 Powder by Bi 21 Sr 2 co 2 o 8 Chemical proportion weighing;

[0031] b. Mix the above powders evenly and grind them in a ball mill for 5 hours;

[0032] c. Put the ground powder in an alumina crucible, and then put it into a high-temperature furnace for sintering. The sintering temperature is 700°C and the time is 3 hours;

[0033] d, the sintered powder is taken out, placed in a ball mill and ground for 3 hours, then pressed into a small round cake with a diameter of 25 cm with a tablet press, and the weight of the small round cake is 12 grams. Finally, the small round cake is sintered in a high-temperature furnace at a temperature of 880° C. for 10 hours.

[0034] 2. The Bi-rich b...

Embodiment 2

[0041] Example 2: Bi 2 Sr 2 co 2 o 8 (20nm) / Sr 0.09 Nb 0.01 TiO 3 Fabrication of p-n heterojunctions.

[0042] 1. Repeat steps 1-2 in Example 1;

[0043] 2. Doping niobium into 1% doped strontium niobate titanate (Sr 0.093 Nb 0.01 TiO 3 ) substrate (place of origin: Hefei Kejing Material Technology Co., Ltd.) is ultrasonically cleaned with acetone, alcohol, and deionized water with a purity of 99.99%, and then placed on the heater in the reaction chamber;

[0044] 3. Repeat steps 4-5 in Example 1;

[0045] 4. Remove the base baffle and start formal deposition. The deposition time is 1 minute. The laser frequency during deposition is 4Hz, and the energy density is 1.5×10 4 J / m 2 ;

[0046] 5. Repeat step 7 in Example 1;

[0047] 6. After the substrate temperature drops to 30°C, take the sample out of the pulsed laser deposition reaction chamber. In this way, a p-type conductive bismuth strontium cobalt oxide (Bi 2 Sr 2 co 2 o 8 ) film and 1% Nb-doped n-type ...

Embodiment 3

[0048] Example 3: Bi 2 Sr 2 co 2 o 8 (200nm) / Sr 009 Nb 0.007 TiO 3 Fabrication of p-n heterojunctions.

[0049] 1. Repeat steps 1-5 in Example 1;

[0050] 2. Remove the substrate baffle and start formal deposition. The deposition time is 10 minutes. The laser frequency during deposition is 4Hz, and the energy density is 1.5×10 4 J / m 2 ;

[0051] 3. Repeat step 7 in Example 1;

[0052] 4. After the substrate temperature drops to 30°C, take the sample out of the pulsed laser deposition reaction chamber. In this way, a p-type conductive bismuth strontium cobalt oxide (Bi 2 Sr 2 co 2 o 8 ) film and 0.7% Nb-doped n-type conductive doped strontium niobate titanate (Sr 0.093 Nb 0.007 TiO 3 ) substrate composed of Bi 2 Sr 2 co 2 o 8 (200nm) / Sr 0.09 Nb 0.007 TiO 3 p-n heterojunction, so far the whole preparation process is over.

[0053] Sintered Bi-rich bismuth strontium cobalt oxide Bi as described in the above examples 2+x Sr 2 co 2 o 8 For ceramic targe...

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Abstract

The invention provides a transition metal oxide p-n heterojunction composed of a p-type conducting material Bi2Sr2Co2O8 and an n-type conducting material doped Sr1-xNbxTiO3. In the method, a layer ofhigh-quality thermoelectrical thin film of the p-type conducting material Bi2Sr2Co2O8 is epitaxially grown on a n-type conducting doped Sr1-xNbxTiO3 substrate by a pulsed laser deposition method to form the brand-new transition metal oxide p-n heterojunction. The heterojunction has excellent diode rectification characteristic within a very broad temperature range including room temperature and below the room temperature, and can observe the characteristic that junction resistance is modulated by current and the like; the characteristics prove that the novel oxide p-n heterojunction has application prospects in the aspects of electronics, electronic technology and electronic engineering.

Description

technical field [0001] The invention relates to a transition metal oxide p-n heterojunction and a preparation method thereof, and belongs to the technical field of oxide heterojunction preparation. Background technique [0002] The traditional p-n heterojunction is formed by superposition and coupling of two semiconductor materials with opposite conductivity types, such as Si, Ge, GaAs, etc. In recent years, with the continuous emergence of new materials and the improvement of material preparation technology, an all-oxide p-n heterojunction composed of two transition metal oxide materials with opposite conductivity types has appeared. Compared with traditional semiconductor p-n heterojunctions, transition metal all-oxide p-n heterojunctions have better thermal and chemical stability. In addition, transition metal oxides cover properties and effects such as dielectric, ferroelectric, piezoelectric, pyroelectric, photoelectric, superconducting, giant magnetoresistance, etc. T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/00H01L21/04C23C14/28C23C14/08
Inventor 王淑芳何立平陈明敬于威李晓苇傅广生
Owner HEBEI UNIVERSITY
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