The invention discloses an organic rectifier diode, relates to the field of organic semiconductor electronic devices, and particularly relates to a composite organic rectifier diode compounded on an organic/organic p-n heterojunction interface on the basis of a charge carrier. The composite organic rectifier diode disclosed by the invention comprises a base, a bottom electrode, a p-type material layer, an n-type material layer, a charge buffer layer and a top electrode. The composite organic rectifier diode is characterized in that m-MTDATA, 2T-NATA, CuPc, TPD, NPB, TAPC, TCTA, CBP or Rubrene is used as the p-type material layer; C60 is used as the n-type material layer. The composite organic rectifier diode disclosed by the invention has the advantages that the composite organic rectifier diode is high in material selectivity, and the common p-type organic material can be selected with high flexibility; due to the complex mechanism, the rectified current can be supplied by compounding electrons and holes at the p-n heterojunction interface, and the composite organic rectifier diode is low in interface impedance and high in rectification ratio; the composite organic rectifier diode is simple in process and high in apparatus repeatability, is not doped with the p-type material and the n-type material, and is low in demands on fabrication processes and equipments of apparatuses.