2results about How to "Good rectification characteristics" patented technology

The invention discloses a preparation method of a laminated PbS quantum dot detector, and belongs to the technical field of infrared detectors. The method comprises the following steps: preparing a ligand and a dispersing agent; providing a substrate; preparing a bottom electrode on the substrate; preparing a hole transport layer on the bottom electrode, wherein the hole transport layer comprises a NiOx thin film and a PbS-EDT thin film; preparing a long-wave light absorption layer on the hole transport layer, wherein the long-wave light absorption layer comprises 2000nm PbS CQD; preparing a short-wave light absorption layer on the long-wave light absorption layer, wherein the short-wave light absorption layer comprises 1550nm PbS CQD; preparing an electron transport layer on the short-wave light absorption layer, wherein the electron transport layer comprises a C60 thin film and a thin film; and preparing a top electrode on the electron transport layer. According to the method, the short-wave light absorption layer and the electron transmission layer are in direct contact to form a main junction, the electron tunneling potential barrier is increased by utilizing the wide-band gap characteristic of the short-wave light absorption layer, meanwhile, the defects are low, trap auxiliary tunneling current is reduced, dark current is reduced, and full coverage of 1550-2000 nm can be achieved through the design of stacking the long-wave light absorption layer and the short-wave light absorption layer.

A graphene / 4H-SiC alpha particle detector and a preparation method thereof, and relate to the technical field of semiconductor radiation detectors. The detector comprises: a 4H-SiC substrate, and an n-type epitaxial layer located on the upper surface of the 4H-SiC substrate; an ohmic contact electrode formed on the lower surface of the 4H-SiC substrate; and a Schottky incident window electrode formed on the upper surface of the n-type epitaxial layer; wherein the Schottky incident window electrode is composed of graphene with an atomic level thickness, and the graphene forms a Schottky contact with the n-type epitaxial layer. The atomic level thickness of graphene is used to suppress the "dead layer" effect of the incident window, thereby improving the energy resolution of the detector.