51results about How to "Good rectification characteristics" patented technology

In a p-n junction-type compound semiconductor light-emitting diode provided on a crystal substrate with at least an n-type active layer formed of a Group III nitride semiconductor as a light emitting layer, and with a Group III nitride semiconductor layer containing a p-type impurity on the n-type active layer, the diode has a boron phosphide-based Group III-V compound semiconductor layer possessing a band gap exceeding that of the Group III nitride semiconductor forming the n-type active layer at room temperature and exhibiting a p-type electroconductivity in an undoped state deposited on the p-type impurity-containing Group Ill nitride semiconductor layer, and has an ohmic positive electrode joined to a surface of the boron phosphide-based Group III-V compound semiconductor layer.

A perovskite structure lanthanum manganese oxide / zinc oxide alloplasm p-n junction and the preparation method pertains to the semiconductor material manufacturing field. The invention uses a magnetron sputtering method to prepare the perovskite structure lanthanum manganese oxide / zinc oxide alloplasm p-n junction. The structure of the p-n junction is a Si(100) single crystal chip(1) substrate, a Pt electrode layer (2), a ZnO film(3), and a LSMO film(4). The invention preparative LSMO / ZnO p-n junction not only has excellent rectification characteristic in the temperature range of 40-320K, but also has solved the problem of the existing technology that has a high use cost of PLD, and is not suitable to apply in large-scale industrial production. The perovskite structure lanthanum manganese oxide / zinc oxide alloplasm p-n junction obtained by the inventive method has good application potential in spinning electron device field.

The invention provides a bi-directional light control thyratron transistor chip, an optical triggering coupler and a solid-state relay. A first light control thyratron transistor section and a second light control thyratron transistor section are arranged on a surface of a semiconductor chip. Each light control thyratron transistor section has a PNPN section. The PNPN section comprises a positive electrode diffusion region in a conductive type, a substrate in another conductive type, a control electrode diffusion region in a conductive type and a negative electrode diffusion region formed in the control electrode diffusion region in another conductive type. The distance of the cut surface to the control electrode diffusion region is below 400 micrometers. Thus, a few of minority carriers generated at the first light control thyratron transistor section side during connection are collected to the cut surface at the first light control thyratron transistor section side before migration. Schottky barrier or a channel separation region cannot be formed, rectification characteristics are raised greatly, increase of the chip area can be inhibited and load is controlled through light triggering by one chip.

The invention belongs to the technical field of semiconductors and particularly relates to a ZnO / NiO heterostructure orderly multi-hole thin film and a manufacturing method thereof. A new option is provided for semiconductor materials. According to the technical scheme, the ZnO / NiO heterostructure orderly multi-hole thin film comprises a conducting substrate and a heterostructure growing on the conducting substrate, and the heterostructure is formed by a p type NiO orderly multi-hole thin film and an n type ZnO orderly multi-hole thin film which grows in sequence from bottom to top. The invention further provides a manufacturing method of the ZnO / NiO heterostructure orderly multi-hole thin film. The ZnO / NiO heterostructure orderly multi-hole thin film can be widely used in the fields such as an ultraviolet detector, a light-emitting diode and a resistance random access memory.

The invention provides a transition metal oxide p-n heterojunction composed of a p-type conducting material Bi2Sr2Co2O8 and an n-type conducting material doped Sr1-xNbxTiO3. In the method, a layer ofhigh-quality thermoelectrical thin film of the p-type conducting material Bi2Sr2Co2O8 is epitaxially grown on a n-type conducting doped Sr1-xNbxTiO3 substrate by a pulsed laser deposition method to form the brand-new transition metal oxide p-n heterojunction. The heterojunction has excellent diode rectification characteristic within a very broad temperature range including room temperature and below the room temperature, and can observe the characteristic that junction resistance is modulated by current and the like; the characteristics prove that the novel oxide p-n heterojunction has application prospects in the aspects of electronics, electronic technology and electronic engineering.

The invention specifically relates to a bionic light capture device N3 / PT1 / AAO film. The N3 / PT1 / AAO film is prepared by anodizing and electrostatic self-assembly process, and the N3 / PT1 / AAO film includes a funnel-shaped base AAO layer, a PT1 functional layer and an N3 functional layer; wherein, the There is an energy level difference between the PT1 molecule and the N3 molecule; the PT1 functional layer and the N3 functional layer are adsorbed on the macropore end or the small pore end side of the AAO substrate in the form of electrostatic mutual assembly, and the substrate side will appear large-scale. PT1‑N3 heteroplane. Through the inner walls of the nanochannels, large-scale N3‑PT1 heteroplanes are formed. Under simulated sunlight irradiation, it not only achieves the capture of μA‑level high photoresponse ion current, but also has good ion selectivity and large ion flux, which provides new opportunities for the development of high-performance nanofluidic biomimetic light harvesting systems. research ideas.

The invention relates to a photodiode device. The photodiode device comprises a light source and a rectifying structure; the rectifying structure comprises a high-resistance light gain semiconductor substrate, a graphene layer located on the high-resistance light gain semiconductor substrate, a first ITO electrode and a second electrode, wherein the first ITO electrode and the second electrode are located on the high-resistance light gain semiconductor substrate and the graphene layer, one part of the first ITO electrode and one part of the second electrode contact with the high-resistance light gain semiconductor substrate, and the other part of the first ITO electrode and the other part of the second electrode contact with the graphene layer; the energy of light emitted by the light source is greater than the band gap of the high-resistance light gain semiconductor substrate, and the light source only irradiates the first ITO electrode; and the area of the ITO electrode is larger than the area of the light spot of the light emitted by the light source. The photodiode device of the invention is of a planar structure and has high photoelectric response speed and can be potentially applied to the planar integration and micro-nano device field.