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CaTiO3 structure La-Mn oxide/zinc oxide heterogeneous p-n junction and its making method

A perovskite structure, manganese oxide technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of lack of large-scale production capacity and high production costs

Inactive Publication Date: 2007-10-17
BEIJING UNIV OF TECH
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Problems solved by technology

[0006] The purpose of the present invention is to solve the problems that the current LSMO / ZnO p-n junction preparation technology has high production costs and does not have large-scale production capacity

Method used

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  • CaTiO3 structure La-Mn oxide/zinc oxide heterogeneous p-n junction and its making method
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  • CaTiO3 structure La-Mn oxide/zinc oxide heterogeneous p-n junction and its making method

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Embodiment Construction

[0019] Using Si(100) single crystal substrate as the substrate, the perovskite structure Lanthanum manganese oxide / ZnO heterogeneous p-n junction was prepared by using ZnO and LSMO ceramic targets respectively. The specific process steps are:

[0020] 1. Prepare a 300nm-thick Pt bottom electrode on the substrate, and vacuum anneal at 500°C for 30min;

[0021] 2. Deposit a 300nm-thick ZnO film on the Pt lower electrode, and the process conditions are: substrate temperature 600°C, working pressure 0.1Pa, oxygen partial pressure 5%;

[0022] 3. After covering part of the ZnO film with a mask, deposit a 150nm LSMO film, the process conditions: substrate temperature 800°C, working pressure 0.5Pa, oxygen partial pressure 20%;

[0023] 4. Ag electrodes were deposited on the ZnO and LSMO thin films at a substrate temperature of 100 °C, respectively.

[0024] According to the above preparation conditions, different sputtering powers were used respectively (see Table 1).

[0025] ...

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Abstract

A perovskite structure lanthanum manganese oxide / zinc oxide alloplasm p-n junction and the preparation method pertains to the semiconductor material manufacturing field. The invention uses a magnetron sputtering method to prepare the perovskite structure lanthanum manganese oxide / zinc oxide alloplasm p-n junction. The structure of the p-n junction is a Si(100) single crystal chip(1) substrate, a Pt electrode layer (2), a ZnO film(3), and a LSMO film(4). The invention preparative LSMO / ZnO p-n junction not only has excellent rectification characteristic in the temperature range of 40-320K, but also has solved the problem of the existing technology that has a high use cost of PLD, and is not suitable to apply in large-scale industrial production. The perovskite structure lanthanum manganese oxide / zinc oxide alloplasm p-n junction obtained by the inventive method has good application potential in spinning electron device field.

Description

technical field [0001] The invention belongs to the field of semiconductor material manufacturing, and in particular relates to the preparation of lanthanum strontium manganese oxide-zinc oxide (La 0.7 Sr 0.3 MnO 3 / ZnO, LSMO / ZnO) p-n junction method. Background technique [0002] As a basic component, p-n junction diode plays an important role in microelectronics. Compared with traditional p-n junctions, oxide p-n junctions not only provide a technical basis for the development of new electronic devices due to their rich electrical, magnetic, optical properties and high temperature resistance, but also become the most important research topic in modern solid state physics. . [0003] Perovskite-structured LSMO due to Sr 2+ Ion doping has p-type semiconductor conductivity. Furthermore, the carrier concentration is a sensitive function of composition, temperature, and external field due to double exchange. Therefore, the LSMO-based p-n junction can realize the external...

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Application Information

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IPC IPC(8): H01L29/861H01L21/329
Inventor 张铭陆然代红云严辉王波宋雪梅
Owner BEIJING UNIV OF TECH
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