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Composite organic rectifier diode

A rectifier diode and composite technology, which is applied in the field of organic semiconductor electronic devices, can solve the problems of limited organic rectifier diode devices, and achieves the effects of high repeatability, simple process, and low requirements for production technology and instruments.

Inactive Publication Date: 2014-08-06
YUNNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] What the present invention is to solve is the problem that organic rectifier diode devices are limited to diffused heterojunctions, and a composite organic rectifier diode based on the recombination of charge carriers at the organic / organic p-n heterojunction interface is proposed

Method used

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Embodiment 1

[0024] Embodiment 1: A composite organic rectifier diode device, the layers of the device are arranged in the following order from bottom to top: base, bottom electrode, p-type material layer, n-type material layer, charge buffer layer, top electrode. in:

[0025] The substrate is glass with better smoothness;

[0026] The bottom electrode is ITO photoetched on the substrate;

[0027] The p-type material layer is deposited on the bottom electrode, and the material is selected from NPB, m-MTDATA, 2T-NATA, CuPc, TPD, TAPC, or Rubrene, and its thickness is 30nm;

[0028] The n-type material layer is C deposited on the p-type material layer 60 , with a thickness of 60 nm;

[0029] The buffer layer is BCP deposited on the n-type material layer with a thickness of 7 nm;

[0030] The top electrode is metal Al deposited on the buffer layer with a thickness of 100 nm.

Embodiment 2

[0031] Embodiment 2: A composite organic rectifier diode device, the layers of the device are arranged in the following order from bottom to top: substrate, bottom electrode, interface modification layer, p-type material layer, n-type material layer, charge buffer layer and top electrodes, of which:

[0032] The substrate is glass with better smoothness;

[0033] The bottom electrode is ITO photoetched on the substrate;

[0034] The interface modification layer is MoO deposited on the bottom electrode 3 , with a thickness of 1 nm;

[0035] The p-type material layer is TCTA or CBP deposited on the interface modification layer, with a thickness of 30 nm;

[0036] The n-type material layer is C deposited on the p-type material layer 60 , with a thickness of 60 nm;

[0037] The charge buffer layer is BCP deposited on the n-type material layer with a thickness of 7 nm;

[0038] The top electrode is metal Al deposited on the buffer layer with a thickness of 100 nm.

Embodiment 3

[0039] Embodiment 3: A composite organic rectifier diode device, the layers of the device are arranged in the following order from bottom to top: substrate, bottom electrode, interface modification layer, p-type material layer, n-type material layer, charge buffer layer and top electrodes, of which:

[0040] The substrate is glass with better smoothness;

[0041] The bottom electrode is Al deposited on the substrate with a thickness of 50 nm;

[0042] The interface modification layer is MoO deposited on the bottom electrode 3 , with a thickness of 3 nm;

[0043] The p-type material layer is NPB, m-MTDATA, 2T-NATA, CuPc, TPD, TAPC, TCTA, CBP or Rubrene deposited on the interface modification layer, with a thickness of 30 nm;

[0044] The n-type material layer is C deposited on the p-type material layer 60 , with a thickness of 60 nm;

[0045] The charge buffer layer is BCP deposited on the n-type material layer with a thickness of 7 nm;

[0046] The top electrode is metal...

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Abstract

The invention discloses an organic rectifier diode, relates to the field of organic semiconductor electronic devices, and particularly relates to a composite organic rectifier diode compounded on an organic / organic p-n heterojunction interface on the basis of a charge carrier. The composite organic rectifier diode disclosed by the invention comprises a base, a bottom electrode, a p-type material layer, an n-type material layer, a charge buffer layer and a top electrode. The composite organic rectifier diode is characterized in that m-MTDATA, 2T-NATA, CuPc, TPD, NPB, TAPC, TCTA, CBP or Rubrene is used as the p-type material layer; C60 is used as the n-type material layer. The composite organic rectifier diode disclosed by the invention has the advantages that the composite organic rectifier diode is high in material selectivity, and the common p-type organic material can be selected with high flexibility; due to the complex mechanism, the rectified current can be supplied by compounding electrons and holes at the p-n heterojunction interface, and the composite organic rectifier diode is low in interface impedance and high in rectification ratio; the composite organic rectifier diode is simple in process and high in apparatus repeatability, is not doped with the p-type material and the n-type material, and is low in demands on fabrication processes and equipments of apparatuses.

Description

technical field [0001] The invention relates to the field of organic semiconductor electronic devices, in particular to an organic rectifying diode based on the recombination of charge carriers at the organic / organic p-n heterojunction interface. Background technique [0002] Organic semiconductors have very broad commercial applications. Examples include organic light-emitting diodes in flat panel displays and solid-state lighting, and organic solar cells in renewable energy. In addition, there is another very potential application of organic semiconductors, that is, the application of organic rectifier diodes in RFID (radio frequency identification tags). [0003] The development of organic rectifying diodes is mainly based on metal / organic, inorganic / organic, and p-i-n organic / organic semiconductor heterojunctions, while organic rectifying diode devices based on organic / organic p-n heterojunctions have not been reported yet. [0004] The carrier transport mechanism of h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30H01L51/10
CPCH10K85/10H10K85/211H10K85/60H10K10/26
Inventor 何守杰王登科吕正红
Owner YUNNAN UNIV
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