Preparation method of cadmium sulfide/silicon heterostructure with white light transmission

A heterostructure, cadmium sulfide technology, applied in the field of semiconductors, can solve the problems of non-adjustable luminescence peak position, single luminescence peak position, poor rectification characteristics, etc., and achieve the effect of good application prospects.

Inactive Publication Date: 2007-09-19
ZHENGZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the disadvantages of cadmium sulfide/silicon heterostructure material lattice constant mismatch, single luminous peak position after recombination, low luminous intensity and non-adjustable luminous peak position, poor rectification characteristics, and inability to meet the performance requ

Method used

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  • Preparation method of cadmium sulfide/silicon heterostructure with white light transmission
  • Preparation method of cadmium sulfide/silicon heterostructure with white light transmission
  • Preparation method of cadmium sulfide/silicon heterostructure with white light transmission

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Experimental program
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Effect test

Embodiment 1

[0019] 1. Put a P-type (111) oriented single crystal silicon wafer with a resistivity of 0.015Ω·cm into an autoclave, and fill it with a hydrofluoric acid solution with a concentration of 8.00mol / l and an aqueous ferric nitrate solution of 0.04mol / l. Etching solution, the solution volume filling degree of the autoclave is 95%, and it is etched at a temperature of 200 ° C for 30 minutes to prepare the substrate material silicon nanoporous column array (Si-NPA);

[0020] 2. Put the Si-NPA substrate into 0.005mol / l CdCl 2 Immerse in deionized aqueous solution for 30 hours, take it out and dry it naturally in the air at room temperature, put hydrogen sulfide (H 2 S) in-situ heterogeneous chemical reaction growth under natural conditions in air flow for 30 hours;

[0021] 3. After annealing at 100°C for 30 minutes in a high-purity nitrogen atmosphere, CdS nanorings and nanoparticles are formed at the bottom and top of each silicon column to form a CdS / Si heterostructure. Its morp...

Embodiment 2

[0023] 1. Put a P-type (111)-oriented single crystal silicon wafer with a resistivity of 0.10Ω·cm into an autoclave, and fill it with a hydrofluoric acid solution with a concentration of 17.00mol / l and an aqueous ferric nitrate solution of 0.25mol / l. Etching solution, the solution volume filling degree of the autoclave is 60%, corroding at a temperature of 60° C. for 16 hours, and preparing the substrate material silicon nanoporous column array (Si-NPA);

[0024] 2. Put the Si-NPA substrate into 1.0mol / l Cd(CH 3 COOH) 2 Immerse in 95% alcohol solution for 12 hours, take it out and dry it naturally in the air at room temperature, put it in hydrogen sulfide (H 2 S) in-situ heterogeneous chemical reaction growth under natural conditions in air flow for 12 hours;

[0025] 3. After annealing at 700°C for 10 minutes in an oxygen atmosphere, a "curtain"-like cadmium sulfide / silicon (CdS / Si) heterostructure can be obtained and white light emission with red, green and blue luminescen...

Embodiment 3

[0027] 1. Put a P-type (111) oriented single crystal silicon wafer with a resistivity of 2.80Ω·cm into an autoclave, and fill it with a hydrofluoric acid solution with a concentration of 22.00mol / l and an aqueous ferric nitrate solution of 0.5mol / l. Etching solution, the solution volume filling degree of the autoclave is 40%, and it is etched at a temperature of 50° C. for 35 hours to prepare the substrate material silicon nanoporous column array (Si-NPA);

[0028] 2. Put the Si-NPA substrate into Cd(NO 3 ) 2 Immerse in the methylene disulfone solution for 30 minutes, take it out, dry it naturally in the air at room temperature, put it in hydrogen sulfide (H 2 S) in-situ multi-phase chemical reaction growth under natural conditions in the air flow for 1 hour; and during the entire impregnation and in-situ growth process of the substrate, a columnar low-pressure mercury ultraviolet lamp with a power of 20W is used for irradiation induction;

[0029] 3. After annealing at 400°C ...

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Abstract

The invention discloses a method of preparing cadmium sulfide/silicon heterogeneity structure with white light emission, which includes steps: putting P-type single-crystal silicon sheet into autoclave filled with etching solution constituted of hydrofluoric acid and ferric nitrate water solution to corrode underlay material silicon nano pore and column array (Si-NPA); oxidizing the Si-NPA, putting the oxidized Si-NPA into cadmium salt solution for impregnating, airing in air at room temperature, putting into hydrogen sulfide air flow to carry in-situ heterogeneous chemical reaction growth under natural condition or light-induction condition, annealing at temperature of 100-700 DEG C and under protecting gas atmosphere, and then obtaining cadmium sulfide/silica heterogeneity structure with microstructure and adjustable luminescence characteristic and realizing white light emission which luminescence peak of red, green and blue light appear simultaneously. Advantages of the preparing method are: ambient operation, simple process, easy operation, 100% of repetition rate; the heterogeneity structure expresses adjustable photoelectricity property, realizes high strength white light emission, and is important material for preparing new solid illumination, micro-electronic and opto-electronic device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to an in-situ multiphase chemical preparation technology of a heterogeneous structure with a regular array structure, adjustable white light emission and superior rectification characteristics. Background technique: [0002] Heterostructures are an important part of semiconductor devices. The difference in the bandgap width of the two materials and the difference in other physical properties make the heterojunction have a series of characteristics that the homojunction does not have, and some functions that the homojunction cannot achieve will be obtained in the device design. For example, using the broadband side as the emitter in a heterojunction transistor can obtain a high injection ratio, so a high current amplification factor can be obtained. If the transition of the two materials in the heterojunction is gradual, the gradual change of the band gap is equivalent to the e...

Claims

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Application Information

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IPC IPC(8): C09K11/59H01J61/44
CPCY02B20/181Y02B20/00
Inventor 李新建许海军
Owner ZHENGZHOU UNIV
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