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Perofskite structure lanthanide manganese oxides/tin oxide heterogeneous p-n junction and preparation thereof

A perovskite structure, manganese oxide technology, applied in the field of material manufacturing, can solve problems such as hindering the application of perovskite structure oxide p-n junction, high price of high-power lasers, and increasing the cost of PLD methods, and achieve excellent rectification characteristics, Good adhesion and compact structure

Inactive Publication Date: 2009-06-17
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the limitations of the plume area, the nonlinear change of the evaporated particle temperature, and the uneven distribution of mass space, PLD is only suitable for small-area deposition, and the deposition process is accompanied by the phenomenon of droplet deposition, which is easy to cause thin film structures. inhomogeneous, thus affecting its electron transport properties
In addition, due to the high price of high-quality and high-power lasers, the cost of the PLD method is increased, which hinders the industrial application of the perovskite structure oxide p-n junction

Method used

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  • Perofskite structure lanthanide manganese oxides/tin oxide heterogeneous p-n junction and preparation thereof
  • Perofskite structure lanthanide manganese oxides/tin oxide heterogeneous p-n junction and preparation thereof
  • Perofskite structure lanthanide manganese oxides/tin oxide heterogeneous p-n junction and preparation thereof

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Embodiment 1

[0021] 1) Deposit 300nm thick SnO on the substrate single crystal Si(100) by magnetron sputtering 2 Layer, deposition conditions: magnetron sputtering RF power 100W, SnO 2 Ceramic is the target material, the substrate temperature is 500°C, the working gas is argon and oxygen, the working pressure is 0.7Pa, and the oxygen partial pressure is 10%;

[0022] 2) SnO obtained in step 1) by magnetron sputtering 2 A 150nm-thick LSMO layer is deposited on the layer to obtain a perovskite structure lanthanum manganese oxide / tin oxide heterogeneous p-n junction. Deposition conditions: magnetron sputtering RF power of 100W, LSMO ceramics as target material, and substrate temperature of 800 ℃, the working gas is argon and oxygen, the working pressure is 1.5Pa, and the oxygen partial pressure is 20%.

Embodiment 2

[0024] 1) Using magnetron sputtering method on the substrate single crystal TiO 2 Deposit 100nm thick SnO on (100) 2 Layer, deposition conditions: magnetron sputtering RF power 200W, SnO 2 Ceramic is the target material, the substrate temperature is 300°C, the working gas is argon and oxygen, the working pressure is 0.5Pa, and the oxygen partial pressure is 15%;

[0025] 2) SnO obtained in step 1) by magnetron sputtering 2 A 300nm-thick LSMO layer is deposited on the layer to obtain a perovskite structure lanthanum manganese oxide / tin oxide heterogeneous p-n junction. Deposition conditions: magnetron sputtering RF power of 200W, LSMO ceramics as target material, and substrate temperature of 600 ℃, the working gas is argon and oxygen, the working pressure is 0.5Pa, and the oxygen partial pressure is 25%.

Embodiment 3

[0027] 1) Using magnetron sputtering method on the substrate single crystal ZnF 2 Deposit 200nm thick SnO on (100) 2 Layer, deposition conditions: magnetron sputtering RF power 150W, SnO 2 Ceramic is the target material, the substrate temperature is 600°C, the working gas is argon and oxygen, the working pressure is 1Pa, and the oxygen partial pressure is 5%;

[0028] 2) SnO obtained in step 1) by magnetron sputtering 2 A 100nm-thick LSMO layer is deposited on the layer to obtain a perovskite structure lanthanum manganese oxide / tin oxide heterogeneous p-n junction. Deposition conditions: magnetron sputtering RF power of 150W, LSMO ceramics as target material, and substrate temperature of 750 ℃, the working gas is argon and oxygen, the working pressure is 1Pa, and the oxygen partial pressure is 5%.

[0029] From figure 2 It can be seen that the SnO prepared by the present invention 2 The / LSMO p-n junction exhibits good rectification characteristics at room temperature (3...

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Abstract

A heterogeneous p-n junction of perovskite structured La-Mn oxide / tin oxide and a preparation process thereof belong to the material manufacturing field. At the present, a p-n junction compounded by La-Mn oxide and tin oxide does not exist. The p-n junction provided by the invention comprises a single-crystal substrate, a SnO2 layer and an LSMO layer, wherein the SnO2 layer is deposited on the single-crystal substrate, the thickness of the SnO2 layer is 100-300 nm, the LSMO layer is deposited on the SnO2 layer, and the thickness of the LSMO layer is 100-300 nm. The invention prepares the heterogeneous p-n junction of perovskite structured La-Mn oxide / tin oxide through utilizing a magnetron sputtering method to sequentially deposit the SnO2 layer and the LSMO layer on a depositing bottom. The p-n junction provided by the invention has excellent rectification characteristics, is low in cost, and is suitable for industrial production.

Description

technical field [0001] The invention belongs to the field of material manufacturing, and in particular relates to a method of applying magnetron sputtering technique (magnetron sputtering technique) to prepare lanthanum manganese oxide / tin oxide (La 0.7 Sr 0.3 MnO 3 / SnO 2 ) p-n junction method. Background technique [0002] As a basic component, p-n junction diode plays an important role in microelectronics. La perovskite structure 0.7 Sr 0.3 MnO 3 (LSMO) due to Sr 2+ Ion doping has the conductivity of a p-type semiconductor. In addition, due to the double exchange effect, the concentration of LSMO carriers is a sensitive function of composition, temperature and external field, and the electrical or magnetic properties of LSMO-based p-n junctions can be modulated by an applied electric or magnetic field. [0003] SnO 2 With exceptionally rich photoelectric performance and gas-sensing properties, it is a kind of ultraviolet semiconductor optoelectronic device mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/24H01L21/04H01L21/363C23C14/35C23C14/08C23C14/54
Inventor 张铭王宪谋严辉宋雪梅王波朱满康侯育冬王如志汪浩
Owner BEIJING UNIV OF TECH
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