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Amorphous strontium titanate thin-film device and preparation method thereof

A thin-film device, strontium titanate technology, applied in the direction of electrical components, etc., can solve the problems of expensive raw materials, high temperature required for preparation, poor stability and easy fatigue, etc., and achieve the effect of wide application fields, large switching ratio and good stability

Active Publication Date: 2018-06-29
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The raw materials for the preparation of resistive storage devices in the prior art are expensive, the preparation requires high temperature, the process is complicated, the stability is poor and it is easy to fatigue, and it is difficult to carry out large-scale industrial production

Method used

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  • Amorphous strontium titanate thin-film device and preparation method thereof
  • Amorphous strontium titanate thin-film device and preparation method thereof
  • Amorphous strontium titanate thin-film device and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0053] With strontium nitrate Sr(NO 3 ) 2 (99.5%) as raw material; ethylene glycol as solvent. Strontium nitrate Sr(NO 3 ) 2 (99.5%) was dissolved in ethylene glycol, and stirred at 50°C for 4 to 5 hours until fully dissolved to obtain a strontium nitrate solution.

[0054] Butyl phthalate Ti(OC 4 h 9 ) 4 (99%) as starting material; acetylacetone as solvent. According to the stoichiometric ratio and the molar ratio of strontium nitrate is 1:1 weighing, the butyl phthalate Ti(OC 4 h 9 ) 4 (99%) dissolved in acetylacetone, stirred at room temperature for 2 to 2.5 hours until fully dissolved to obtain butyl phthalate solution.

[0055] The butyl titanate solution was added dropwise to the strontium nitrate solution, stirred at a constant speed for 5 hours, and the concentration of the solution was adjusted to 0.25 mol / L with acetylacetone to obtain a strontium titanate solution.

[0056] SrTiO 3 The (STO) solution is spin-coated on the FTO conductive glass, spin-coate...

Embodiment 2

[0065] With strontium nitrate Sr(NO 3 ) 2 (99.5%) as raw material; ethylene glycol as solvent. Strontium nitrate Sr(NO 3 ) 2 (99.5%) was dissolved in ethylene glycol, and stirred at 50°C for 4.5 hours until fully dissolved to obtain strontium nitrate solution.

[0066] Butyl phthalate Ti(OC 4 h 9 ) 4 (99%) as starting material; acetylacetone as solvent. According to the stoichiometric ratio and the molar ratio of strontium nitrate is 1:1 weighing, the butyl phthalate Ti(OC 4 h 9 ) 4 (99%) was dissolved in acetylacetone, and stirred at room temperature for 2 hours until fully dissolved to obtain a butyl phthalate solution.

[0067] The butyl titanate solution was added dropwise to the strontium nitrate solution, stirred at a constant speed for 5 hours, and the concentration of the solution was adjusted to 0.25 mol / L with acetylacetone to obtain a strontium titanate solution.

[0068] SrTiO 3 The (STO) solution is spin-coated on the FTO conductive glass, spin-coated ...

Embodiment 3

[0074] With strontium nitrate Sr(NO 3 ) 2 (99.5%) as raw material; ethylene glycol as solvent. Strontium nitrate Sr(NO 3 ) 2 (99.5%) was dissolved in ethylene glycol, and stirred at 50°C for 5 hours until fully dissolved to obtain strontium nitrate solution.

[0075] Butyl phthalate Ti(OC 4 h 9 ) 4 (99%) as starting material; acetylacetone as solvent. According to the stoichiometric ratio and the molar ratio of strontium nitrate is 1:1 weighing, the butyl phthalate Ti(OC 4 h 9 ) 4 (99%) was dissolved in acetylacetone, and stirred at room temperature for 2 hours until fully dissolved to obtain a butyl phthalate solution.

[0076] The butyl titanate solution was added dropwise to the strontium nitrate solution, stirred at a constant speed for 5 hours, and the concentration of the solution was adjusted to 0.25 mol / L with acetylacetone to obtain a strontium titanate solution.

[0077] SrTiO 3 (STO) solution spin coating on SiO 2 / Si (silicon oxide / silicon wafer is a c...

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Abstract

The invention provides a preparation method of an amorphous strontium titanate thin-film device. The preparation method comprises the following steps: spin-coating a bottom electrode solution to the surface of a substrate to be annealed to form a bottom electrode; spin-coating a strontium titanate solution to the surface of the bottom electrode to be roasted to form a strontium titanate thin film;annealing the strontium titanate thin film to form an amorphous thin film; and carrying out electron beam evaporation sputtering on the surface of the amorphous thin-film to form a top electrode so as to obtain the amorphous strontium titanate thin-film device. The greatest innovation point of the amorphous strontium titanate thin-film device provided by the invention is as follows: a main body oxide thin film layer of the device is an amorphous thin film, the preparation method is simple in process, the demand on temperature in the preparation process is relatively low, and the device can beproduced in batches; moreover, the prepared strontium titanate thin-film device is good in stability and fatigue resistant, can be recycled, and is great in switch ratio which reaches 103 during annealing at 400 DEG C, and is wide in application field.

Description

technical field [0001] The invention relates to the technical field of functional thin film devices, in particular to an amorphous strontium titanate thin film device and a preparation method thereof. Background technique [0002] In recent decades, the continuous optimization of computer technology marks the rapid development of modern information technology, which constantly changes people's lifestyles. Memory is an indispensable carrier of information technology and one of the most important technologies in the field of integrated circuits. When the size of the Flash memory device is below 65nm, the contradiction between the erasing and writing speed and reliability of the traditional polysilicon floating gate structure Flash memory and the leakage of the gate dielectric limit the further optimization of the device. In 2000, Liu et al. from the University of Houston found that Pr 0.7 Ca 0.3 MnO 3 The resistive switching phenomenon in thin films has set off an upsurge ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/8836H10N70/021
Inventor 汤卉唐新桂刘秋香蒋艳平张天富
Owner GUANGDONG UNIV OF TECH
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